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140122 ||| eng |
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|a 9783642691560
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| 100 |
1 |
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|a Ryssel, H.
|e [editor]
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| 245 |
0 |
0 |
|a Ion Implantation: Equipment and Techniques
|h Elektronische Ressource
|b Proceedings of the Fourth International Conference Berchtesgaden, Fed. Rep. of Germany, September 13–17, 1982
|c edited by H. Ryssel, H. Glawischnig
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| 250 |
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|a 1st ed. 1983
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| 260 |
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|a Berlin, Heidelberg
|b Springer Berlin Heidelberg
|c 1983, 1983
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| 300 |
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|a X, 558 p
|b online resource
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| 505 |
0 |
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|a High Temperature Implantation of Powders Using a Horizontal Ion Beam (With 2 Figures) -- A Technique for Implanting Dopant Distributions in Solids (With 5 Figures) -- Wafer Cooling and Photoresist Masking Problems in Ion Implantation (With 18 Figures) -- Electron-Beam-Induced Recoil Implantation in Semiconductors at 300 K (With 10 Figures) -- Wafer Cooling in Ion Implantation (With 8 Figures) -- A Rotating Attenuator for Concentration Profiling of Implanted Helium Ions (With 6 Figures) -- V Ion Beam Lithography -- Ion-Beam Lithography (With 11 Figures) -- Development Characteristics of Ga+ Exposed PMMA and Associated Lithographic Resolution Limits (With 5 Figures) -- Simulation of the Lithographic Properties of Ion-Beam Resists (With 6 Figures) -- Deposition of Masking Films by Ion-Beam Induced Polymerization (With 4 Figures) -- VI Measuring Techniques -- Dosimetry and Beam Quality (With 21 Figures) -- A New Facility for Ion Beam Surface Analysis (With 6 Figures) --
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| 505 |
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|a Radiation Annealing of Silicon-Implanted GaAs with a CW Xe Arc Lamp (With 7 Figures) -- Pulse-Laser-Induced Epitaxial Regrowth of Ion-Implanted Semiconductors (With 15 Figures) -- CO2 Laser Annealing of Ion-Implanted Silicon: Relaxation Characteristics of Metastable Concentrations (With 6 Figures) -- Rapid Isothermal Annealing for Semiconductor Applications: Aspects of Equipment Design (With 5 Figures) -- Investigation of Polysilicon Implantation Under Thermal and Laser Annealing (With 8 Figures) -- CW-CO2-Laser Alloying of Au-Ge-Ni Ohmic Contacts on GaAs (With 7 Figures) -- Photoluminescence of Ion-Implanted Gallium Arsenide After Laser Annealing (With 7 Figures) -- Channeling and High-Resolution Backscattering Studies of Laser-Annealed Low-Energy Arsenic-Implanted Silicon (With 8 Figures) -- Index of Contributors
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| 505 |
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|a An Ion Source for Semiconductor Implantation (With 7 Figures) -- III Implanter Subsystems -- High Throughput Wafer Handling System for Serial Process Ion Implantation (With 13 Figures) -- Comparison of Beam Scanning Systems (With 16 Figures) -- A Low-Internal-Resistance and High-Precision High-Voltage Power Supply (With 5 Figures) -- Electrostatic Switch Used for 600 kV Ion Implanter (With 6 Figures) -- Automatic Wafer Handling for a Mechanically Scanned Ion Implanter (With 3 Figures) -- On-Line Control of Production Ion Implanters Using Standard Desk Computers (With 3 Figures) -- A Forty-Channel Optical-Fiber Telecommunication System for Manipulation of High-Voltage Terminals in Ion Implanters (With 3 Figures) -- Low-Cost Analog Signal Fiber Link with 300 kV Isolation (With 3 Figures) -- Improvements in the Vacuum System of a VDGAccelerator Used for Clean Ion Implantation (With 3 Figures) -- IV Special Implantation Techniques --
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| 505 |
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|a Non-Destructive Techniques for Measuring the Parameters of Low-Energy Continuous Ion Beams (With 5 Figures) -- Investigation of the Lifetime of Photocurrent Carriers in Si During Ion Implantation (With 5 Figures) -- A Mössbauer Spectrometer for in situ Low Temperature Studies of Ion-Bombarded Metals (With 4 Figures) -- Background in (n, p) and (n, ?) Spectrometry (With 6 Figures) -- Monitoring of X-Y-Scan Quality by Amorphization Contrast on Silicon Wafers (With 4 Figures) -- VII Implantation into Metals -- Techniques and Equipment for Implantation into Metals (With 7 Figures) -- Nitriding of Steels: Conventional Processes and Ion Implantation (With 5 Figures) -- Effect of Ion Mixing on the Wear Behaviour of Silver (With 4Figures) -- Methods to Control Target Heating During Ion Implantation (With 5 Figures) -- VIII Implantation into Semiconductors -- New Applications of Ion Implantation in Silicon Processing (With 14 Figures) --
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| 505 |
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|a I Ion Implanters -- Physical Limitations of Ion Implantation Equipment (With 16 Figures) -- A New Ion Implanter for Solar-Cell Fabrication (With 7 Figures) -- SURIM – A Westinghouse Surface Implantation Machine (With 8 Figures) -- A New Research Implanter at the University of Surrey (With 4 Figures) -- Radio Frequency Ion Accelerator (With 6 Figures) -- II Ion Sources -- Performance of the Bethge-Baumann Ion Source with Radio Frequency Operation (With 1 Figures) -- Emittance Measurements on an Indirectly Heated Heavy-Ion Source (With 3 Figures) -- A High-Brightness Duoplasmatron Ion Source (With 2 Figures) -- Optimization of a Single-Aperture Extraction System for High-Current Ion Sources (With 9 Figures) -- Development of a High-Current Ion Source for Non-Volatile Elements (With 5 Figures) -- The Use of Computers for Designing and Testing Ion Beam Systems (With 23 Figures) -- Multipole Ion Source for Ion Implantation and Isotope Separation (With 5 Figures) --
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| 505 |
0 |
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|a Limitations of Ion Implantation in MOS Technology (With 13 Figures) -- Implant Processes for Bipolar Product Manufacturing and Their Effects on Device Yield (With 16 Figures) -- Buried Silicon-Nitride Layers Formed by Nitrogen-Ion Implantation and High-Temperature Annealing (With 5 Figures) -- Combined Boron and Aluminum Implantation for High-Voltage Devices (With 4 Figures) -- Deep Implanted Layers of Boron in Silicon (With 5 Figures) -- Planar Channelling of Si Implants in GaAs (With 4 Figures) -- Application of High-Current Ion-Implantation Systems in Semiconductor Device Technology (With 6 Figures) -- Implantation Doping of Germanium with Be, Mg, Zn, and B Ions (With 7 Figures) -- Low Energy Implantation of Nitrogen and Ammonia into Silicon (With 12 Figures) -- Doping Behavior of Implanted Magnesium in Silicon (With 11 Figures) -- IX Transient Annealing -- Beam Annealing of Ion-Implanted Silicon (With 16 Figures) --
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| 653 |
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|a Laser
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| 653 |
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|a Lasers
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| 653 |
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|a Crystallography
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| 653 |
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|a Crystallography and Scattering Methods
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| 700 |
1 |
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|a Glawischnig, H.
|e [editor]
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| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b SBA
|a Springer Book Archives -2004
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| 490 |
0 |
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|a Springer Series in Electronics and Photonics
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| 028 |
5 |
0 |
|a 10.1007/978-3-642-69156-0
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| 856 |
4 |
0 |
|u https://doi.org/10.1007/978-3-642-69156-0?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
0 |
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|a 548
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