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180604 ||| eng |
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|a 9783319779942
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| 100 |
1 |
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|a Meneghesso, Gaudenzio
|e [editor]
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| 245 |
0 |
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|a Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
|h Elektronische Ressource
|c edited by Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
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| 250 |
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|a 1st ed. 2018
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| 260 |
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|a Cham
|b Springer International Publishing
|c 2018, 2018
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| 300 |
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|a XIII, 232 p. 183 illus., 165 illus. in color
|b online resource
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| 505 |
0 |
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|a Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics -- Chapter2: Lateral GaN HEMT structures -- Chapter3: Vertical GaN Transistors for Power Electronics -- Chapter4: Reliability of GaN-based Power devices -- Chapter5: Validating GaN robustness -- Chapter6: Impact of Parasitics on GaN Based Power Conversion -- Chapter7: GaN in AC/DC Power Converters -- Chapter8: GaN in Switched Mode Power Amplifiers
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| 653 |
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|a Electronic circuits
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| 653 |
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|a Optical Materials
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| 653 |
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|a Optical materials
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| 653 |
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|a Electronic Circuits and Systems
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| 700 |
1 |
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|a Meneghini, Matteo
|e [editor]
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| 700 |
1 |
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|a Zanoni, Enrico
|e [editor]
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| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b Springer
|a Springer eBooks 2005-
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| 490 |
0 |
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|a Integrated Circuits and Systems
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| 028 |
5 |
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|a 10.1007/978-3-319-77994-2
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| 856 |
4 |
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|u https://doi.org/10.1007/978-3-319-77994-2?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
0 |
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|a 621.3815
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| 520 |
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|a This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies
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