Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficien...

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Corporate Author: SpringerLink (Online service)
Other Authors: Meneghesso, Gaudenzio (Editor), Meneghini, Matteo (Editor), Zanoni, Enrico (Editor)
Format: eBook
Language:English
Published: Cham Springer International Publishing 2018, 2018
Series:Integrated Circuits and Systems
Subjects:
Online Access:
Collection: Springer eBooks 2005- - Collection details see MPG.ReNa
Summary:This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies
Physical Description:XIII, 232 p. 183 illus., 165 illus. in color online resource
ISBN:9783319779942