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180302 ||| eng |
| 020 |
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|a 9783319709178
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| 100 |
1 |
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|a Lutz, Josef
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| 245 |
0 |
0 |
|a Semiconductor Power Devices
|h Elektronische Ressource
|b Physics, Characteristics, Reliability
|c by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker
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| 250 |
|
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|a 2nd ed. 2018
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| 260 |
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|a Cham
|b Springer International Publishing
|c 2018, 2018
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| 300 |
|
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|a XIX, 714 p
|b online resource
|
| 505 |
0 |
|
|a Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn-Junctions -- Short Introduction to Power Device Technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device-Induced Oscillations and Electromagnetic Disturbances -- Power Electronic System Integration
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| 653 |
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|a Mechanical Power Engineering
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| 653 |
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|a Electronics and Microelectronics, Instrumentation
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| 653 |
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|a Electric power production
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| 653 |
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|a Electronic circuits
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| 653 |
|
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|a Electrical Power Engineering
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| 653 |
|
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|a Electronics
|
| 653 |
|
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|a Electronic Circuits and Systems
|
| 700 |
1 |
|
|a Schlangenotto, Heinrich
|e [author]
|
| 700 |
1 |
|
|a Scheuermann, Uwe
|e [author]
|
| 700 |
1 |
|
|a De Doncker, Rik
|e [author]
|
| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
|
| 989 |
|
|
|b Springer
|a Springer eBooks 2005-
|
| 028 |
5 |
0 |
|a 10.1007/978-3-319-70917-8
|
| 856 |
4 |
0 |
|u https://doi.org/10.1007/978-3-319-70917-8?nosfx=y
|x Verlag
|3 Volltext
|
| 082 |
0 |
|
|a 6,213,815
|
| 520 |
|
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|a This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition
|