Research on the Radiation Effects and Compact Model of SiGe HBT
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique...
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| Format: | eBook |
| Language: | English |
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Singapore
Springer Nature Singapore
2018, 2018
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| Edition: | 1st ed. 2018 |
| Series: | Springer Theses, Recognizing Outstanding Ph.D. Research
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| Collection: | Springer eBooks 2005- - Collection details see MPG.ReNa |
| Summary: | This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique |
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| Physical Description: | XXIV, 168 p. 171 illus online resource |
| ISBN: | 9789811046124 |