Research on the Radiation Effects and Compact Model of SiGe HBT
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique...
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| Format: | eBook |
| Language: | English |
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Singapore
Springer Nature Singapore
2018, 2018
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| Edition: | 1st ed. 2018 |
| Series: | Springer Theses, Recognizing Outstanding Ph.D. Research
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| Collection: | Springer eBooks 2005- - Collection details see MPG.ReNa |
Table of Contents:
- Introduction
- Ionization damage in SiGe HBT
- Displacement damage with swift heavy ions in SiGe HBT
- Single-event transient induced by pulse laser microbeam in SiGe HBT
- Small-signal equivalent circuit of SiGe HBT based on the distributed effects
- Parameter extraction of SiGe HBT models
- Conclusion