Semiconductor Interfaces at the Sub-Nanometer Scale

The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces...

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Corporate Author: SpringerLink (Online service)
Other Authors: Salemink, H.W.M. (Editor), Pashley, M.D. (Editor)
Format: eBook
Published: Dordrecht Springer Netherlands 1993, 1993
Edition:1st ed. 1993
Series:Nato Science Series E:, Applied Sciences
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
Table of Contents:
  • “Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy”
  • V. Nanometer Scale Devices
  • “Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures”
  • “Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AlAs Heterostructures Grown on Non-(100)-Oriented Substrates?”
  • “Strained Layer Quantum Well Semiconductor Lasers”
  • List of Participants
  • Current Status”
  • “A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy”
  • “The Role of Surface Reconstructions in MBE Growth of GaAs”
  • “A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Lattice”
  • “Resonant Tunnelling via the Bound States of Shallow Donors”
  • II. Electronic Properties of Semiconductor Interfaces
  • “Engineering of Semiconductor Heterostructures by Ultrathin Control Layers”
  • Pinned vs. Unpinned Surfaces”
  • “Semiconductor Interfaces: Structure, Properties and Processing at the Atomic Level”
  • “Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Doping”
  • IV. Group IV Materials
  • “Group IV Strained Layer Systems”
  • “MISFIT Accommodation during Heteroepitaxial Growth”
  • “Smear-Out of the Ge/Si Interface in Gas Source MBE Monitored by RHEED”
  • “Optical Properties of Imperfect Si-Ge Heterostructures”
  • “Si1-x-yGexCy Growth and Properties of the Ternary System”