Semiconductor Interfaces at the Sub-Nanometer Scale
The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces...
| Other Authors: | , |
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| Format: | eBook |
| Language: | English |
| Published: |
Dordrecht
Springer Netherlands
1993, 1993
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| Edition: | 1st ed. 1993 |
| Series: | NATO Science Series E:, Applied Sciences
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| Subjects: | |
| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- “Interface Chemical Structure, Band Offsets and Optical Properties of Various III-V Compounds Heterostructures”
- “Dipole Layers at GaAs Heterojunctions and Their Investigation”
- “Clustering and Correlations on GaAs-Metal Interface”
- III. Atomic Scale Analysis of Semiconductor Interfaces
- “Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces”
- “Semiconductor Interfaces: Structure, Properties and Processing at the Atomic Level”
- “Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Doping”
- IV. Group IV Materials
- “Group IV Strained Layer Systems”
- “MISFIT Accommodation during Heteroepitaxial Growth”
- “Smear-Out of the Ge/Si Interface in Gas Source MBE Monitored by RHEED”
- “Optical Properties of Imperfect Si-Ge Heterostructures”
- “Si1-x-yGexCy Growthand Properties of the Ternary System”
- “Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy”
- V. Nanometer Scale Devices
- “Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures”
- “Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AlAs Heterostructures Grown on Non-(100)-Oriented Substrates?”
- “Strained Layer Quantum Well Semiconductor Lasers”
- List of Participants
- I. Epitaxial Growth of Semiconductors
- “Surface Atomic Processes during Epitaxial Growth”
- “Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductors”
- “Surface Chemistry in the Si/Ge GSMBE System Studied Using RHEED”
- “Diffusion of Si in ?-Doped GaAs Studied by Magneto Transport”
- “Theory of Atomic-Scale Processes during Epitaxial Growth: Current Status”
- “A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy”
- “The Role of Surface Reconstructions in MBE Growth of GaAs”
- “A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Lattice”
- “Resonant Tunnelling via the Bound States of Shallow Donors”
- II. Electronic Properties of Semiconductor Interfaces
- “Engineering of Semiconductor Heterostructures by Ultrathin Control Layers”