Semiconductor Interfaces at the Sub-Nanometer Scale

The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces...

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Corporate Author: SpringerLink (Online service)
Other Authors: Salemink, H.W.M. (Editor), Pashley, M.D. (Editor)
Format: eBook
Language:English
Published: Dordrecht Springer Netherlands 1993, 1993
Edition:1st ed. 1993
Series:Nato Science Series E:, Applied Sciences
Subjects:
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
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245 0 0 |a Semiconductor Interfaces at the Sub-Nanometer Scale  |h Elektronische Ressource  |c edited by H.W.M Salemink, M.D. Pashley 
246 3 1 |a Proceedings of the NATO Advanced Research Workshop on The Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale, Riva del Garda, Italy, August 31-September 2, 1992 
250 |a 1st ed. 1993 
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505 0 |a “Atomic-Scale View of Epitaxial Layers with Cross-Sectional Scanning Tunneling Microscopy” -- V. Nanometer Scale Devices -- “Atomic-Scale Understanding and Controllability of Heterointerfaces in Quantum Microstructures” -- “Do Periodic Interface Corrugations Cause the Unusual Optical Properties of GaAs/AlAs Heterostructures Grown on Non-(100)-Oriented Substrates?” -- “Strained Layer Quantum Well Semiconductor Lasers” -- List of Participants 
505 0 |a Current Status” -- “A Comparison of Growth by Molecular Beam Epitaxy, Metalorganic Chemical Vapour Deposition and Chemical Beam Epitaxy” -- “The Role of Surface Reconstructions in MBE Growth of GaAs” -- “A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Lattice” -- “Resonant Tunnelling via the Bound States of Shallow Donors” -- II. Electronic Properties of Semiconductor Interfaces -- “Engineering of Semiconductor Heterostructures by Ultrathin Control Layers” --  
505 0 |a Pinned vs. Unpinned Surfaces” -- “Semiconductor Interfaces: Structure, Properties and Processing at the Atomic Level” -- “Epitaxial Interfaces of III-V Heterostructures: Atomic Resolution, Composition Fluctuations and Doping” -- IV. Group IV Materials -- “Group IV Strained Layer Systems” -- “MISFIT Accommodation during Heteroepitaxial Growth” -- “Smear-Out of the Ge/Si Interface in Gas Source MBE Monitored by RHEED” -- “Optical Properties of Imperfect Si-Ge Heterostructures” -- “Si1-x-yGexCy Growth and Properties of the Ternary System” --  
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653 |a Thin films 
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653 |a Materials science 
653 |a Electronic materials 
653 |a Optical and Electronic Materials 
653 |a Solid State Physics 
653 |a Characterization and Evaluation of Materials 
653 |a Spectroscopy and Microscopy 
653 |a Optical materials 
653 |a Microscopy 
653 |a Surfaces and Interfaces, Thin Films 
653 |a Solid state physics 
700 1 |a Pashley, M.D.  |e [editor] 
710 2 |a SpringerLink (Online service) 
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082 0 |a 620.44 
520 |a The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling