Heterostructures on Silicon: One Step Further with Silicon
In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The su...
| Other Authors: | , |
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| Format: | eBook |
| Language: | English |
| Published: |
Dordrecht
Springer Netherlands
1989, 1989
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| Edition: | 1st ed. 1989 |
| Series: | NATO Science Series E:, Applied Sciences
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| Subjects: | |
| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- GaAs ON Si
- MBE Growth of GaAs and III–V Quantum Wells on Si
- Epitaxy of GaAs on Patterned Si Substrates by MBE
- Embedded Molecular Beam Epitaxy for a Coplanar Gallium-Arsenide on Silicon Technology
- Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlattices
- Growth of GaAs and GaAlAs Double Heterostructures on Si by MOCVD
- Developement of MBE for Low Temperature and Lattice-Mismatched Systems Growth of III–V Compounds
- MOMBE and PEMOCVD Growth of GaAs on Si (100) Substrates
- Correlation Between Structural and Optical Properties OF GaAs-on-Si Grown by MBE
- GaAs on Si: Potential Applications
- Other III–V and II–VI on Si
- Ge, GaAs and InSb Heteroepitaxy on (100) Si
- Heteroepitaxy of CdTe on GaAs-ON-Si
- Heteroepitaxial Growth of (Al)GaAs on InP by MOVPE
- SiGe Heterostructures
- SiGe/Si Superlattices: Strain Influence and Devices
- Relaxation of Si/Si1-xGex Strained Layer Structures
- Growth and Electronic Transport in Thin Epitaxial CoSi2-Si Heterostructures
- Polymers on Si
- Organic Polymers and Molecular Materials on Si
- Organic Polymer Films for Solid State Sensor Applications
- Electrochemical Encapsulation of Solid State Devices
- Silicon Insulators Heterostructures
- Silicon on Insulator
- Complete Experimental and Theoretical Analysis of Electrical Transport of S.O.S. Films: The Particularity of Heavily Doped Samples
- Heteroepitaxial Growth of SiC on Si and its Application
- Nucleation Step of GaAs/Si and GaAs/(Ca,Sr)F2/Si: Aes and Rheed Studies
- Epitaxial CaF2-SrF2-BaF2 Stacks On Si(111) and Si(100)
- YSZ Heteroepitaxy on Silicon by Ion Beam Sputtering
- Heteroepitaxy Of Semiconductor/Fluoride/Si Structures
- Unstrained vs. Strained Layer Epitaxy: Thick Ge Layers and Ge/Si Superlattices on Si(100)
- Direct Band-Gap Si-Based Semiconductors, Principles and Prospects
- Growth and Characterisation of Si/Ge Multilayer Structures on Si(100)
- Realisation of Short Period Si/Ge Strained-Layer Superlattices
- Dopant Segregation and Incorporation in Molecular Beam Epitaxy
- Superconductors /Si Heterostructures
- High Tc Superconducting Interconnections in Semiconductor-Based Electronic Systems
- Superconductor-Silicon Heterostructures
- Silicide / Silicon Heterostructures
- Progress in Epitaxial Insulators and Metals on Si
- Growth of CoSi2 and CoSi2/Si Superlattices
- Formation of Epitaxial CoSi2 Films on Si(111) a Low Temperature (?400°C)
- Recent Developments in the Epitaxial Growth of Transition Metal Silicides on Silicon
- Formation of BuriedEpitaxial Co Silicides by Ion Implantation
- Structural Study of CoSi2/Si (001) and (111)