Heterostructures on Silicon: One Step Further with Silicon

In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The su...

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Corporate Author: SpringerLink (Online service)
Other Authors: Nissim, Y. (Editor), Rosencher, Emmanuel (Editor)
Format: eBook
Language:English
Published: Dordrecht Springer Netherlands 1989, 1989
Edition:1st ed. 1989
Series:Nato Science Series E:, Applied Sciences
Subjects:
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
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100 1 |a Nissim, Y.  |e [editor] 
245 0 0 |a Heterostructures on Silicon: One Step Further with Silicon  |h Elektronische Ressource  |c edited by Y. Nissim, Emmanuel Rosencher 
246 3 1 |a Proceedings of the NATO Advanced Research Workshop, Cargèse, Corsica, France, May 15-20, 1988 
250 |a 1st ed. 1989 
260 |a Dordrecht  |b Springer Netherlands  |c 1989, 1989 
300 |a 368 p  |b online resource 
505 0 |a Thick Ge Layers and Ge/Si Superlattices on Si(100) -- Direct Band-Gap Si-Based Semiconductors, Principles and Prospects -- Growth and Characterisation of Si/Ge Multilayer Structures on Si(100) -- Realisation of Short Period Si/Ge Strained-Layer Superlattices -- Dopant Segregation and Incorporation in Molecular Beam Epitaxy -- Superconductors /Si Heterostructures -- High Tc Superconducting Interconnections in Semiconductor-Based Electronic Systems -- Superconductor-Silicon Heterostructures -- Silicide / Silicon Heterostructures -- Progress in Epitaxial Insulators and Metals on Si -- Growth of CoSi2 and CoSi2/Si Superlattices -- Formation of Epitaxial CoSi2 Films on Si(111) a Low Temperature (?400°C) -- Recent Developments in the Epitaxial Growth of Transition Metal Silicides on Silicon -- Formation of Buried Epitaxial Co Silicides by Ion Implantation -- Structural Study of CoSi2/Si (001) and (111) --  
505 0 |a Potential Applications -- Other III–V and II–VI on Si -- Ge, GaAs and InSb Heteroepitaxy on (100) Si -- Heteroepitaxy of CdTe on GaAs-ON-Si -- Heteroepitaxial Growth of (Al)GaAs on InP by MOVPE -- SiGe Heterostructures -- SiGe/Si Superlattices: Strain Influence and Devices -- Relaxation of Si/Si1-xGex Strained Layer Structures --  
505 0 |a The Particularity of Heavily Doped Samples -- Heteroepitaxial Growth of SiC on Si and its Application -- Nucleation Step of GaAs/Si and GaAs/(Ca,Sr)F2/Si: Aes and Rheed Studies -- Epitaxial CaF2-SrF2-BaF2 Stacks On Si(111) and Si(100) -- YSZ Heteroepitaxy on Silicon by Ion Beam Sputtering -- Heteroepitaxy Of Semiconductor/Fluoride/Si Structures 
653 |a Materials—Surfaces 
653 |a Thin films 
653 |a Spectroscopy 
653 |a Electronic materials 
653 |a Optical and Electronic Materials 
653 |a Solid State Physics 
653 |a Spectroscopy and Microscopy 
653 |a Optical materials 
653 |a Microscopy 
653 |a Surfaces and Interfaces, Thin Films 
653 |a Solid state physics 
700 1 |a Rosencher, Emmanuel  |e [editor] 
710 2 |a SpringerLink (Online service) 
041 0 7 |a eng  |2 ISO 639-2 
989 |b SBA  |a Springer Book Archives -2004 
490 0 |a Nato Science Series E:, Applied Sciences 
856 |u https://doi.org/10.1007/978-94-009-0913-7?nosfx=y  |x Verlag  |3 Volltext 
082 0 |a 530.41 
520 |a In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985