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Gate Dielectrics and MOS ULSIs Principles, Technologies and Applications

Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integrat...

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Bibliographic Details
Main Author: Hori, Takashi
Format: eBook
Language:English
Published: Berlin, Heidelberg Springer Berlin Heidelberg 1997, 1997
Edition:1st ed. 1997
Series:Springer Series in Electronics and Photonics
Subjects:
Condensed Matter Physics
Optical Materials
Condensed Matter
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
Table of Contents:
  • Content
  • 1. Introduction
  • 1.1 The History of Silicon MOS Devices
  • 1.2 Scaling Issues in ULSIs
  • 1.3 Requirements on Gate Dielectrics: Depending on Applications
  • 2. MIS Structure
  • 2.1 Ideal MIS System
  • 2.2 Real System: Si-SiO2 MOS Technology
  • 2.3 Carrier Transport in Dielectric Films
  • 2.4 Electrical Measurements
  • (a) Film Thickness
  • (b) Work Function and Fixed-Charge Density
  • (c) Interface-State Density
  • (a) High-Frequency Method
  • (b) Transient Spectroscopy
  • (c) Charge-Pumping Method
  • (a) Carrier Injection
  • (b) Trap Density and Capture Cross Section
  • (c) Distribution of Traps
  • 3. MOS Field-Effect Transistor
  • 3.1 Classical MOS Transistor
  • 3.2 MOSFET Parameters
  • (a) n-FETs with VT Adjustment
  • (b) Buried-Channel p-FETs
  • (a) Velocity Saturation Along the Lateral Field
  • (b) Inversion-Layer Mobility
  • (c) Universal Relation for the Effective Normal Field
  • 3.3 Scaling
  • (a) Small-Geometry Effects
  • (c) Discussion on the.Mobility Modulation
  • 5.3 Dielectric Reliability
  • (a) Dependence on the Fabrication Condition
  • (b) A Model for Electron Trapping
  • (c) A Model for Interface-State Generation
  • (a) Charge-to-Breakdown
  • (b) Extrinsic Breakdown
  • (a) Nonvolatile Memories
  • (b) CMOSFETs with Advanced Gates
  • 5.4 Issues Inherent to Scaled MOSFETs
  • (a) Substrate and Gate Current
  • (b) Hot-Carrier-Induced Degradation
  • (c) Device Lifetime
  • 5.5 Summary and Outlook
  • 6. High-Dielectric Constant Films: for Passive Capacitance
  • 6.1 Silicon Nitride (Si3N4)
  • 6.2 Tantalum Oxide (Ta2O5
  • 6.3 Ferroelectrics
  • (a) Ferroelectric Properties
  • (b) Issues Common to ULSI Applications
  • References
  • (b) Limited Performance Under High Fields
  • (c) Hot-Carrier Effects and Drain Engineering
  • (d) Gate-Induced Drain Leakage
  • (e) Dielectric Reliability and Gate Electrodes
  • 3.4 Device Integration
  • 4. Thermally Grown Silicon Oxide
  • 4.1 Processing
  • 4.2 Electrical and Physical Characteristics
  • 4.3 Charge-Trapping Characteristics
  • 4.4 Dielectric Breakdown
  • (a) Intrinsic Breakdown
  • (b) Extrinsic Breakdown
  • (c) Thickness Dependence
  • (a) Electrode-Related Breakdown
  • (b) Isolation-Related Breakdown
  • (c) Oxide Integrity Degradation Near Gate Edges
  • (d) Nonvolatile Memories
  • 4.5 Hot-Carrier-Induced Degradation
  • 4.6 Other Silicon Oxides
  • 4.7 Summary and Future Trends
  • 5. Thermally Nitrided Oxides: for Flash Memories
  • 5.1 Processing and Material Properties
  • (a) Processing Issues
  • (b) Rapid Thermal Processing
  • (c) Nitridation of SiO2
  • 5.2 ElectricalCharacteristics and Performance
  • (a) Electron Mobility
  • (b) Hole Mobility

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