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140122 ||| eng |
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|a 9783642608568
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|a Hori, Takashi
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|a Gate Dielectrics and MOS ULSIs
|h Elektronische Ressource
|b Principles, Technologies and Applications
|c by Takashi Hori
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| 250 |
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|a 1st ed. 1997
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| 260 |
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|a Berlin, Heidelberg
|b Springer Berlin Heidelberg
|c 1997, 1997
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| 300 |
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|a XIV, 352 p
|b online resource
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|a Content -- 1. Introduction -- 1.1 The History of Silicon MOS Devices -- 1.2 Scaling Issues in ULSIs -- 1.3 Requirements on Gate Dielectrics: Depending on Applications -- 2. MIS Structure -- 2.1 Ideal MIS System -- 2.2 Real System: Si-SiO2 MOS Technology -- 2.3 Carrier Transport in Dielectric Films -- 2.4 Electrical Measurements -- (a) Film Thickness -- (b) Work Function and Fixed-Charge Density -- (c) Interface-State Density -- (a) High-Frequency Method -- (b) Transient Spectroscopy -- (c) Charge-Pumping Method -- (a) Carrier Injection -- (b) Trap Density and Capture Cross Section -- (c) Distribution of Traps -- 3. MOS Field-Effect Transistor -- 3.1 Classical MOS Transistor -- 3.2 MOSFET Parameters -- (a) n-FETs with VT Adjustment -- (b) Buried-Channel p-FETs -- (a) Velocity Saturation Along the Lateral Field -- (b) Inversion-Layer Mobility -- (c) Universal Relation for the Effective Normal Field -- 3.3 Scaling -- (a) Small-Geometry Effects --
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|a (c) Discussion on the.Mobility Modulation -- 5.3 Dielectric Reliability -- (a) Dependence on the Fabrication Condition -- (b) A Model for Electron Trapping -- (c) A Model for Interface-State Generation -- (a) Charge-to-Breakdown -- (b) Extrinsic Breakdown -- (a) Nonvolatile Memories -- (b) CMOSFETs with Advanced Gates -- 5.4 Issues Inherent to Scaled MOSFETs -- (a) Substrate and Gate Current -- (b) Hot-Carrier-Induced Degradation -- (c) Device Lifetime -- 5.5 Summary and Outlook -- 6. High-Dielectric Constant Films: for Passive Capacitance -- 6.1 Silicon Nitride (Si3N4) -- 6.2 Tantalum Oxide (Ta2O5 -- 6.3 Ferroelectrics -- (a) Ferroelectric Properties -- (b) Issues Common to ULSI Applications -- References
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|a (b) Limited Performance Under High Fields -- (c) Hot-Carrier Effects and Drain Engineering -- (d) Gate-Induced Drain Leakage -- (e) Dielectric Reliability and Gate Electrodes -- 3.4 Device Integration -- 4. Thermally Grown Silicon Oxide -- 4.1 Processing -- 4.2 Electrical and Physical Characteristics -- 4.3 Charge-Trapping Characteristics -- 4.4 Dielectric Breakdown -- (a) Intrinsic Breakdown -- (b) Extrinsic Breakdown -- (c) Thickness Dependence -- (a) Electrode-Related Breakdown -- (b) Isolation-Related Breakdown -- (c) Oxide Integrity Degradation Near Gate Edges -- (d) Nonvolatile Memories -- 4.5 Hot-Carrier-Induced Degradation -- 4.6 Other Silicon Oxides -- 4.7 Summary and Future Trends -- 5. Thermally Nitrided Oxides: for Flash Memories -- 5.1 Processing and Material Properties -- (a) Processing Issues -- (b) Rapid Thermal Processing -- (c) Nitridation of SiO2 -- 5.2 ElectricalCharacteristics and Performance -- (a) Electron Mobility -- (b) Hole Mobility --
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|a Condensed Matter Physics
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|a Optical Materials
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|a Optical materials
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| 653 |
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|a Condensed matter
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| 041 |
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|a eng
|2 ISO 639-2
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| 989 |
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|b SBA
|a Springer Book Archives -2004
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| 490 |
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|a Springer Series in Electronics and Photonics
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|a 10.1007/978-3-642-60856-8
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| 856 |
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|u https://doi.org/10.1007/978-3-642-60856-8?nosfx=y
|x Verlag
|3 Volltext
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|a 530.41
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| 520 |
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|a Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail
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