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140122 ||| eng |
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|a 9783642603112
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| 100 |
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|a Fromm, Eckehard
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| 245 |
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|a Kinetics of Metal-Gas Interactions at Low Temperatures
|h Elektronische Ressource
|b Hydriding, Oxidation, Poisoning
|c by Eckehard Fromm
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| 250 |
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|a 1st ed. 1998
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| 260 |
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|a Berlin, Heidelberg
|b Springer Berlin Heidelberg
|c 1998, 1998
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| 300 |
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|a XIII, 206 p. 4 illus
|b online resource
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|a 5.8 Results of Model Calculations, Parameter Variations -- 5.9 Effects of the Defect Structure of the Oxide -- 5.10 Simulation of Experiments with the Volumetric Method -- 5.11 Reaction Mechanisms of Low-Temperature Oxidation -- 6 Poisoning of Hydrogen Reactions -- 6.1 Experimental Results -- 6.2 Stability of Oxide Layers at Elevated Temperatures -- 6.3 Surface Layer of Constant Thickness -- 6.4 Contamination Layers Growing During Exposure -- Appendices -- A Chemical Potentials and Standard States -- A.1 Chemical Potentials -- A.1.1 Definitions -- A.2 Standard States and Standard Reactions -- A.2.1 Elements -- A.2.3 Physisorption -- A.2.4 Molecular Chemisorption -- A.2.5 Atomic Chemisorption -- A.2.6 Metal Interstitials -- A.2.7 Metal Vacancy -- A.2.8 Oxygen Interstitials -- A.2.9 Oxygen Vacancy -- A.2.10Other Compounds -- B Equilibria of Charged Species -- B.1 Poisson Equation -- B.2 Dipole Layers -- B.3 Space Charges -- B.3.3 Conclusions -- B.4 Mott Potential --
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|a B.4.1 Oxygen Molecules as Acceptors -- B.4.2 Oxygen Atoms as Acceptors -- B.4.3 Pressure Independent Acceptor Sites -- B.4.4 Conditions for the Existence of a Mott Equilibrium Potential -- B.5 Equilibria in Oxide Layers -- C Electronic Currents -- C.1 Tunneling -- C.2 Hopping Mechanism -- C.3 Semiconduction -- D Ionic Currents -- D.1 Basic Equations -- D.1.1 Zero Concentration Gradient -- D.1.2 Zero Field Current -- D.1.3 High Field Transport Equation -- D.1.4 Steady State Current in a Homogeneous Field -- D.2 Space Charge Effects -- D.3 Coupled Currents -- E Units, Material Constants -- Symbols -- References
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|a 1 Introduction -- 2 Principles of Reaction Kinetics -- 2.1 Equilibria of Chemical Reactions -- 2.2 Structure of Reaction Models -- 2.3 Characteristics of Reaction Partial Steps -- 3 Experimental Techniques -- 3.1 Initial State of Metal Surfaces and UHV Experiments -- 3.2 Volumetric and Manometric Methods -- 3.3 Quartz Crystal Microbalance -- 3.4 Ellipsometry -- 3.5 Energetic Ion Scattering -- 3.6 X-Ray Reflectivity -- 3.7 Surface-Analytical Methods -- 4 Hydrogen Reactions -- 4.1 Experimental Results -- 4.2 Hydrogen Solution in Metals -- 4.3 Hydride Formation -- 4.4 Computer Simulation of Advanced Models -- 5 Low-Temperature Oxidation -- 5.1 Experimental Results -- 5.2 Rate Laws Proposed in the Literature -- 5.3 Partial Steps of the Oxidation Reaction -- 5.4 Relations and Constants Used in Model Calculations -- 5.5 Example of a Model Considering Space Charges -- 5.6 Models Neglecting Space Charges -- 5.7 Detailed Presentation of a Model with Metal Interstitials as Mobile Defects --
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| 653 |
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|a Surface and Interface and Thin Film
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| 653 |
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|a Superconductivity
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| 653 |
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|a Optical Materials
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| 653 |
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|a Superconductors
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| 653 |
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|a Optical materials
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| 653 |
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|a Surfaces (Physics)
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| 041 |
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7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b SBA
|a Springer Book Archives -2004
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| 490 |
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|a Springer Series in Surface Sciences
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| 028 |
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|a 10.1007/978-3-642-60311-2
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| 856 |
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|u https://doi.org/10.1007/978-3-642-60311-2?nosfx=y
|x Verlag
|3 Volltext
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|a 530.417
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| 520 |
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|a Kinetics of Metal-Gas Interactions at Low Temperatures is devoted to the formation of natural oxide films. These thin surface layers are produced instantaneously when oxygen or water vapor is present in the gas atmosphere. They are responsible for corrosion behavior, for wear and friction of metallic materials, and also for hydrogen embrittlement and poisoning of catalytic surface reactions. Oxidation is a hindrance in surface science and in modern thin-film manufacturing. It can be reliably avoided only with expensive ultra-high vacuum techniques. Despite the practical relevance of the topic, quantitative data are sparse and the few papers published on low-temperature oxidation provide mainly qualitative information. This monograph presents an introduction to the subject in a tutorial style. It demonstrates how complex metal-gas interactions can be analyzed by standard procedures of chemical kinetics, and simulated by reaction models. Typical features of metal-gas reactions observed at ambient and elevated temperatures are illustrated by experimental results. Possible reaction mechanisms are described both by approximations and by advanced models. Rate and time laws describe the limiting cases and the more realistic situation where, in an overall reaction, several crucial partial steps must be considered, namely, adsorption onto the surface and the diffusion of charged or uncharged defects in metallic or semiconducting surface layers
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