Defect Complexes in Semiconductor Structures Proceedings of the International School Held in Mátrafüred, Hungary, September 13 – 17, 1982
| Other Authors: | , , , |
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| Format: | eBook |
| Language: | English |
| Published: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1983, 1983
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| Edition: | 1st ed. 1983 |
| Series: | Lecture Notes in Physics
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| Subjects: | |
| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- A technologist's view on defects
- Characterization of impurities and defects by electron paramagnetic resonance and related techniques
- Review of the possibilities of electron microscopy in the identification of defect structures
- Electrical and optical measuring techniques for flaw states
- Theory of defect complexes
- Critical comparison of the theoretical models for anomalous large lattice relaxation in III–V compounds
- Vacancy related structure defects in SiO2 — Cyclic cluster calculations compared with experimental results
- A new model for the Si-A center
- Defect complexing in iron-doped silicon
- Photoluminescence of defect complexes in silicon
- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon
- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon
- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c
- On the field dependence of capture and emission processes at deep centres
- Lattice matched heterolayers
- Compositional transition layers in heterostructure
- Defect complexes in III–V compounds
- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs
- Main electron traps in gaas: Aggregates of antisite defects
- Defect reactions in gap caused by zinc diffusion
- Nonstatistical defect surroundings in mixed crystals — the selfactivated luminescence centre in ZnSxSe1-x
- Structure and properties of the Si-SiO2 interregion
- Radiation defects of the semiconductor-insulator interface
- Analysis of Si/SiO2 interface defects by the method of term spectroscopy
- Theoretical aspects of laser annealing
- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP
- Panel discussion
- Mechanical stress induced defect creation in GaP.