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140122 ||| eng |
| 020 |
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|a 9783540394563
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| 100 |
1 |
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|a Giber, J.
|e [editor]
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| 245 |
0 |
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|a Defect Complexes in Semiconductor Structures
|h Elektronische Ressource
|b Proceedings of the International School Held in Mátrafüred, Hungary, September 13 – 17, 1982
|c edited by J. Giber, F. Beleznay, I. C. Szep, J. Laszlo
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| 250 |
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|a 1st ed. 1983
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| 260 |
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|a Berlin, Heidelberg
|b Springer Berlin Heidelberg
|c 1983, 1983
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| 300 |
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|a VI, 311 p. 81 illus
|b online resource
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| 505 |
0 |
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|a A technologist's view on defects -- Characterization of impurities and defects by electron paramagnetic resonance and related techniques -- Review of the possibilities of electron microscopy in the identification of defect structures -- Electrical and optical measuring techniques for flaw states -- Theory of defect complexes -- Critical comparison of the theoretical models for anomalous large lattice relaxation in III–V compounds -- Vacancy related structure defects in SiO2 — Cyclic cluster calculations compared with experimental results -- A new model for the Si-A center -- Defect complexing in iron-doped silicon -- Photoluminescence of defect complexes in silicon -- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon -- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon -- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c -- On the field dependence of capture and emission processes at deep centres -- Lattice matched heterolayers -- Compositional transition layers in heterostructure -- Defect complexes in III–V compounds -- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs -- Main electron traps in gaas: Aggregates of antisite defects -- Defect reactions in gap caused by zinc diffusion -- Nonstatistical defect surroundings in mixed crystals — the selfactivated luminescence centre in ZnSxSe1-x -- Structure and properties of the Si-SiO2 interregion -- Radiation defects of the semiconductor-insulator interface -- Analysis of Si/SiO2 interface defects by the method of term spectroscopy -- Theoretical aspects of laser annealing -- Radiation methods for creation of heterostructures on silicon.-Ion beam gettering in GaP -- Panel discussion -- Mechanical stress induced defect creation in GaP.
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| 653 |
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|a Condensed Matter Physics
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| 653 |
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|a Condensed matter
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| 700 |
1 |
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|a Beleznay, F.
|e [editor]
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| 700 |
1 |
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|a Szep, I. C.
|e [editor]
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| 700 |
1 |
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|a Laszlo, J.
|e [editor]
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| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b SBA
|a Springer Book Archives -2004
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| 490 |
0 |
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|a Lecture Notes in Physics
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| 028 |
5 |
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|a 10.1007/3-540-11986-8
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| 856 |
4 |
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|u https://doi.org/10.1007/3-540-11986-8?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
0 |
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|a 530.41
|