Fundamentals of Nanoscaled Field Effect Transistors
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully expl...
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| Format: | eBook |
| Language: | English |
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New York, NY
Springer New York
2013, 2013
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| Edition: | 1st ed. 2013 |
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| Collection: | Springer eBooks 2005- - Collection details see MPG.ReNa |
Table of Contents:
- Scaling of a MOS Transistor
- Nanoscale Effects- Gate Oxide Leakage Currents
- Nanoscale Effects- Inversion Layer Quantization
- Dielectrics for Nanoelectronics
- Germanium Technology
- Biaxial s-Si Technology
- Uniaxial s-Si Technology
- Alternate MOS Structures
- Graphene Technology