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130626 ||| eng |
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|a 9781461468226
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| 100 |
1 |
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|a Chaudhry, Amit
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| 245 |
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|a Fundamentals of Nanoscaled Field Effect Transistors
|h Elektronische Ressource
|c by Amit Chaudhry
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| 250 |
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|a 1st ed. 2013
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| 260 |
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|a New York, NY
|b Springer New York
|c 2013, 2013
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| 300 |
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|a XIV, 201 p. 121 illus., 102 illus. in color
|b online resource
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| 505 |
0 |
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|a Scaling of a MOS Transistor -- Nanoscale Effects- Gate Oxide Leakage Currents -- Nanoscale Effects- Inversion Layer Quantization -- Dielectrics for Nanoelectronics -- Germanium Technology -- Biaxial s-Si Technology -- Uniaxial s-Si Technology -- Alternate MOS Structures -- Graphene Technology
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| 653 |
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|a Nanophysics
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| 653 |
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|a Electronics and Microelectronics, Instrumentation
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| 653 |
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|a Electronic circuits
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| 653 |
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|a Optical Materials
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| 653 |
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|a Nanoscience
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| 653 |
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|a Electronics
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| 653 |
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|a Optical materials
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| 653 |
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|a Electronic Circuits and Systems
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| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b Springer
|a Springer eBooks 2005-
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| 028 |
5 |
0 |
|a 10.1007/978-1-4614-6822-6
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| 856 |
4 |
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|u https://doi.org/10.1007/978-1-4614-6822-6?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
0 |
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|a 621.381
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| 520 |
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|a Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics
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