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Nanoscaled Semiconductor-on-Insulator Structures and Devices

This proceedings volume constitutes an archive of the contributions of the key-speakers who attended the NATO Advanced Research Workshop on “Nanoscaled Semiconductor-On-Insulator Structures and devices” held in the Tourist and Recreation Centre “Sudak” (Crimea, Ukraine) from 15 to 19 October 2006. T...

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Bibliographic Details
Other Authors: Hall, S. (Editor), Nazarov, A.N. (Editor), Lysenko, V.S. (Editor)
Format: eBook
Language:English
Published: Dordrecht Springer Netherlands 2007, 2007
Edition:1st ed. 2007
Series:NATO Science for Peace and Security Series B: Physics and Biophysics
Subjects:
Electronics And Microelectronics, Instrumentation
Electrical And Electronic Engineering
Electrical Engineering
Optical Materials
Electronics
Nanotechnology
Online Access:
Collection: Springer eBooks 2005- - Collection details see MPG.ReNa
Table of Contents:
  • Nanoscaled SOI Material and Device Technologies
  • Status and trends in SOI nanodevices
  • Non-Planar Devices for Nanoscale CMOS
  • High-? Dielectric Stacks for Nanoscaled SOI Devices
  • Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogen Transfer
  • Fluorine –Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates
  • Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETs
  • Physics of Novel Nanoscaled SemOI Devices
  • Integration of silicon Single-Electron Transistors Operating at Room Temperature
  • SiGe Nanodots in Electro-Optical SOI Devices
  • Nanowire Quantum Effects in Trigate SOI MOSFETs
  • Semiconductor Nanostructures and Devices
  • MuGFET CMOS Process with Midgap Gate Material
  • Doping Fluctuation Effects in Multiple-Gate SOI MOSFETs
  • SiGeC HBTs: impact of C on Device Performance
  • Reliability and Characterization of Nanoscaled SOI Devices
  • Noise Research of Nanoscaled SOI Devices
  • Electrical Characterization and Special Properties of FINFET Structures
  • Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETs
  • Investigation of Compressive Strain Effects Induced by STI and ESL
  • Charge Trapping Phenomena in Single Electron NVM SOI Devices Fabricated by a Self-Aligned Quantum DOT Technology
  • Theory and Modeling of Nanoscaled Devices
  • Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems
  • Electron Transport in Silicon-on-Insulator Nanodevices
  • All Quantum Simulation of Ultrathin SOI MOSFETs
  • Resonant Tunneling Devices on SOI Basis
  • Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions
  • Three-Dimensional (3-D) Analytical Modeling of the Threshold Voltage, DIBL andSubthreshold Swing of Cylindrical Gate all Around Mosfets

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