| Summary: | The book presents the basic steps and the technical implementation of individual processes for microelectronic circuit integration in silicon. Interaction and influences of e. g. oxidation, etching, doping and thermal processes for integrating CMOS- and Bipolar circuits are discussed in detail, beginning with the purification of silicon up to the encapsulated integrated circuit. It includes modern processes like atomic layer deposition and etching for nanoscale structures and compares improvements like silicide contacts, copper metallization, high-k dielectrics, and SOI and FINFET structures. All processes are presented looking from the process engineer’s view. The Content Wafer fabrication Thermal oxidation Lithography Etching technology Doping techniques Chemical and Physical Deposition Metallization and Contacts About the Author Prof. Dr.-Ing. Ulrich Hilleringmann has been teaching semiconductor technology, microelectromechanical systems, sensor technology and optoelectronic system integration since 1989
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