Gallium nitride (GaN) physics, devices, and technology
In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both su...
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| Format: | eBook |
| Language: | English |
| Published: |
Boca Raton
CRC Press
2015
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| Series: | Devices, circuits, and systems
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| Subjects: | |
| Online Access: | |
| Collection: | O'Reilly - Collection details see MPG.ReNa |
Table of Contents:
- Chapter 1. GaN high-voltage power devices / Joachim Würfl
- chapter 2. AlGaN/GaN High-electron-mobility transistors grown by ammonia source molecular beam epitaxy / Yvon Cordier
- chapter 3. Gallium nitride transistors on large-diameter Si(111) substrate / Subramaniam Arulkumaran and Geok Ing Ng
- chapter 4. GaN-HEMT scaling technologies for high-frequency radio frequency and mixed signal applications / Keisuke Shinohara
- chapter 5. Group III-nitride microwave monolithically integrated circuits / Rüdiger Quay
- chapter 6. GaN-based metal/insulator/semiconductor-type Schottky hydrogen sensors / Ching-Ting Lee, Hsin-Ying Lee, and Li-Ren Lou
- chapter 7. InGaN-based solar cells / Ezgi Dogmus and Farid Medjdoub
- chapter 8. III-nitride semiconductors : new infrared intersubband technologies / Mark Beeler and Eva Monroy
- chapter 9. Gallium nitride-based interband tunnel junctions / Siddharth Rajan, Sriram Krishnamoorthy, and Fatih Akyol
- chapter 10. Trapping and degradation mechanisms in GaN-based HEMTs / Matteo Meneghini, Gaudenzio Meneghesso, and Enrico Zanoni