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221107 ||| eng |
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|a 9783031120930
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|a Weston, Astrid
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|a Atomic and Electronic Properties of 2D Moiré Interfaces
|h Elektronische Ressource
|c by Astrid Weston
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| 250 |
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|a 1st ed. 2022
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| 260 |
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|a Cham
|b Springer International Publishing
|c 2022, 2022
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| 300 |
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|a XIV, 140 p. 91 illus., 86 illus. in color
|b online resource
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|a Outline -- Introduction to 2-Dimensional Materials and Moiré Superlattices -- Fabrication Techniques -- Characterisation Techniques -- Atomic Structure of Reconstructed Lattices of Twisted Bilayer TMDs -- Electrical Properties of Reconstructed Lattices of Twisted Bilayer TMDs -- Final Conclusions and Future Outlooks
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| 653 |
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|a Thin films
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| 653 |
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|a Electronics—Materials
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| 653 |
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|a Optoelectronic devices
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| 653 |
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|a Electronic Materials
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| 653 |
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|a Optical Materials
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| 653 |
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|a Surfaces, Interfaces and Thin Film
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| 653 |
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|a Optoelectronic Devices
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| 653 |
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|a Optical materials
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| 653 |
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|a Materials—Microscopy
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| 653 |
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|a Microscopy
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| 653 |
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|a Surfaces (Technology)
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| 041 |
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7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b Springer
|a Springer eBooks 2005-
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| 490 |
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|a Springer Theses, Recognizing Outstanding Ph.D. Research
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| 028 |
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|a 10.1007/978-3-031-12093-0
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| 856 |
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|u https://doi.org/10.1007/978-3-031-12093-0?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
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|a 620.44
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| 520 |
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|a This thesis provides the first atomic length-scale observation of the structural transformation (referred to as lattice reconstruction) that occurs in moiré superlattices of twisted bilayer transition metal dichalcogenides (TMDs) at low (θ < 2˚) twist angles. Studies using Scanning transmission electron microscopy (STEM) were limited due to the complexity of the (atomically-thin) sample fabrication requirements. This work developed a unique way to selectively cut and re-stack monolayers of TMDs with a controlled rotational twist angle which could then be easily suspended on a TEM grid to meet the needs of the atomically thin sample requirements. The fabrication technique enabled the study of the two common stacking-polytypes including 3R and 2H (using MoS2 and WS2 as the example) as well as their structural evolution with decreasing twist-angle. Also reported is a comprehensive investigation of electronic properties using scanning probe microscopy and electrical transport measurements of the artificially-engineered structures. These and other studies highlight the unique intrinsic properties of TMDs and their potential application in the development of the next generation of optoelectronics
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