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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going resear...

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Bibliographic Details
Main Author: Verzellesi, Giovanni
Format: eBook
Language:English
Published: Basel MDPI - Multidisciplinary Digital Publishing Institute 2022
Subjects:
P-type Doping
Nh3 Growth Interruption
High Electron Mobility Transistor
Laser Thermal Separation
Sapphire
Digital Signal Processor
Algan/gan
Polar
Compensation Ratio
Density Functional Theory
Nitridation
Time Of Flight (tof)
P-gan Gate Hemt
Sr-doped β-ga2o3
Piezoelectric Micromachined Ultrasonic Transducers
Nickel Oxide
X-ray Imaging
Aluminum Nitride
Technology: General Issues / Bicssc
Plasma Surface Treatment
Stealth Dicing
Hta
Current Collapse
Schottky Barrier Diodes
Buffer Layer
Supercritical Technology
Qst
Optical Absorption
Wide-bandgap (wbg)
Gate Bias Modulation
First-principles
Wide Bandgap Semiconductor
Cubic And Hexagonal Structure
Scattering-parameter Measurements
High-electron Mobility Devices
Charge Traps
Aln
Wafer Dicing
Laser Processing
Temperature
Vanadium Redox Flow Batteries
X-ray Diffraction
Aln Buffer Layer
Algan/gan Heterostructures
Heterogeneous Integration
Breakdown Voltage
Ranging
Electron Lifetime
Crystal Growth
Radio Frequency
Dry Processing
Rectifying Electrode
Energy Industries And Utilities / Bicssc
X-ray Sensor
Optical Band Gap
Semi-polar
High Electron-mobility Transistor (hemt)
Synchronous Buck Converter
Carbon Doping
Breakdown Field
N/a
Strain Relaxation
Electrochromic Device
Gan Power Hemts
Fabrication
Microwave Frequency
Schottky Barrier Diode
Density Of States
Soi
Photovoltaic Module
History Of Engineering And Technology / Bicssc
Magnetron Sputtering
Pure β-ga2o3
Threshold Voltage Stability
Silicon Carbide
Mis-hemts
Silicon Carbide (sic)
Annealing Temperature
Solution Method
Gan-based Led
Palladium Catalyst
Low-resistance Sic Substrate
Non-polar
Radio Frequency Sputtering
Metal-oxide-semiconductor Field Effect Transistor (mosfet)
Energy Storage System
Band Structure
Gallium Nitride (gan)
High-temperature
2deg
Time To Digital Converter Circuit (tdc)
X-ray Photoelectron Spectroscopy
Driving Technology
Gallium Nitride
Auto-compensation
Algan/gan Heterojunction
Blue And Yellow Luminescence
High-electron Mobility Transistor
Gan-hemt Mesa Structures
Sic
Laser Micromachining
Power Conditioning System
Normally Off
High Electron Mobility Transistor (hemt)
Bias Stability
Indium Oxide Thin Film
Hvpe
Crystallite Size
Unidirectional Operation
Equivalent-circuit Modeling
Gan
Low Defect Density
Nitrogen Dioxide Gas Sensor
P-gan Gate
Noise
Online Access:
Collection: Directory of Open Access Books - Collection details see MPG.ReNa
Description
Summary:Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.
Item Description:Creative Commons (cc), https://creativecommons.org/licenses/by/4.0/
Physical Description:1 electronic resource (320 p.)
ISBN:books978-3-0365-3993-5
9783036539935
9783036539942

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