|
|
|
|
| LEADER |
03670nma a2200961 u 4500 |
| 001 |
EB002043916 |
| 003 |
EBX01000000000000001187582 |
| 005 |
00000000000000.0 |
| 007 |
cr||||||||||||||||||||| |
| 008 |
220822 ||| eng |
| 020 |
|
|
|a 9783036533605
|
| 020 |
|
|
|a books978-3-0365-3360-5
|
| 020 |
|
|
|a 9783036533599
|
| 100 |
1 |
|
|a Monzio Compagnoni, Christian
|
| 245 |
0 |
0 |
|a High-Density Solid-State Memory Devices and Technologies
|h Elektronische Ressource
|
| 260 |
|
|
|a Basel
|b MDPI - Multidisciplinary Digital Publishing Institute
|c 2022
|
| 300 |
|
|
|a 1 electronic resource (210 p.)
|
| 653 |
|
|
|a resistive switching memory
|
| 653 |
|
|
|a surface roughness
|
| 653 |
|
|
|a endurance
|
| 653 |
|
|
|a crosspoint array
|
| 653 |
|
|
|a low-frequency noise
|
| 653 |
|
|
|a evaluation method
|
| 653 |
|
|
|a bandwidth
|
| 653 |
|
|
|a transient analysis
|
| 653 |
|
|
|a n/a
|
| 653 |
|
|
|a TAT
|
| 653 |
|
|
|a deep learning
|
| 653 |
|
|
|a thermal management
|
| 653 |
|
|
|a CMOS under array
|
| 653 |
|
|
|a spectral index
|
| 653 |
|
|
|a History of engineering & technology / bicssc
|
| 653 |
|
|
|a STT-MRAM
|
| 653 |
|
|
|a neuromorphic computing
|
| 653 |
|
|
|a random telegraph noise
|
| 653 |
|
|
|a 3D NAND Flash
|
| 653 |
|
|
|a WOW
|
| 653 |
|
|
|a Technology: general issues / bicssc
|
| 653 |
|
|
|a 3D NAND
|
| 653 |
|
|
|a phonon
|
| 653 |
|
|
|a RTN
|
| 653 |
|
|
|a reliability
|
| 653 |
|
|
|a pulse-width modulation
|
| 653 |
|
|
|a in-memory computing
|
| 653 |
|
|
|a dielectric
|
| 653 |
|
|
|a COW
|
| 653 |
|
|
|a oxide trapped charge
|
| 653 |
|
|
|a floating gate cell
|
| 653 |
|
|
|a power consumption
|
| 653 |
|
|
|a bumpless
|
| 653 |
|
|
|a Wiener-Khinchin
|
| 653 |
|
|
|a array test pattern
|
| 653 |
|
|
|a low power electronics
|
| 653 |
|
|
|a NAND Flash memory
|
| 653 |
|
|
|a BBCube
|
| 653 |
|
|
|a program suspend
|
| 653 |
|
|
|a artificial intelligence
|
| 653 |
|
|
|a program noise
|
| 653 |
|
|
|a power spectrum
|
| 653 |
|
|
|a MOSFET
|
| 653 |
|
|
|a artificial neural networks
|
| 653 |
|
|
|a composite free layer
|
| 653 |
|
|
|a TSV
|
| 653 |
|
|
|a NOR Flash memory arrays
|
| 653 |
|
|
|a charge-trap cell
|
| 653 |
|
|
|a Solid State Drives
|
| 653 |
|
|
|a CoFeB
|
| 653 |
|
|
|a spintronics
|
| 653 |
|
|
|a yield
|
| 700 |
1 |
|
|a Shirota, Riichiro
|
| 700 |
1 |
|
|a Monzio Compagnoni, Christian
|
| 700 |
1 |
|
|a Shirota, Riichiro
|
| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
|
| 989 |
|
|
|b DOAB
|a Directory of Open Access Books
|
| 500 |
|
|
|a Creative Commons (cc), https://creativecommons.org/licenses/by/4.0/
|
| 028 |
5 |
0 |
|a 10.3390/books978-3-0365-3360-5
|
| 856 |
4 |
0 |
|u https://www.mdpi.com/books/pdfview/book/5145
|7 0
|x Verlag
|3 Volltext
|
| 856 |
4 |
2 |
|u https://directory.doabooks.org/handle/20.500.12854/81116
|z DOAB: description of the publication
|
| 082 |
0 |
|
|a 900
|
| 082 |
0 |
|
|a 700
|
| 082 |
0 |
|
|a 600
|
| 082 |
0 |
|
|a 620
|
| 520 |
|
|
|a This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms.
|