Broadband amplifiers for high data rates using InP/InGaAs double heterojunction bipolar transistors
This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimi...
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| Format: | eBook |
| Language: | English |
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KIT Scientific Publishing
2006
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| Collection: | Directory of Open Access Books - Collection details see MPG.ReNa |
| Summary: | This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers. |
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| Item Description: | Creative Commons (cc), https://creativecommons.org/licenses/by-nc-nd/4.0/ |
| Physical Description: | 1 electronic resource (VI, 132 p. p.) |
| ISBN: | 3866440219 1000004373 |