|
|
|
|
| LEADER |
05117nma a2201285 u 4500 |
| 001 |
EB001964865 |
| 003 |
EBX01000000000000001127767 |
| 005 |
00000000000000.0 |
| 007 |
cr||||||||||||||||||||| |
| 008 |
210512 ||| eng |
| 020 |
|
|
|a 9783039212798
|
| 020 |
|
|
|a 9783039212804
|
| 020 |
|
|
|a books978-3-03921-280-4
|
| 100 |
1 |
|
|a Leroux, Paul
|
| 245 |
0 |
0 |
|a Radiation Tolerant Electronics
|h Elektronische Ressource
|
| 260 |
|
|
|b MDPI - Multidisciplinary Digital Publishing Institute
|c 2019
|
| 300 |
|
|
|a 1 electronic resource (210 p.)
|
| 653 |
|
|
|a single event upsets
|
| 653 |
|
|
|a FMR
|
| 653 |
|
|
|a analog single-event transient (ASET)
|
| 653 |
|
|
|a radiation-hardened
|
| 653 |
|
|
|a ring-oscillator
|
| 653 |
|
|
|a single event gate rupture (SEGR)
|
| 653 |
|
|
|a Ring Oscillators
|
| 653 |
|
|
|a SEB
|
| 653 |
|
|
|a gamma ray
|
| 653 |
|
|
|a radiation hardening
|
| 653 |
|
|
|a FPGA
|
| 653 |
|
|
|a saturation effect
|
| 653 |
|
|
|a space electronics
|
| 653 |
|
|
|a CMOS analog integrated circuits
|
| 653 |
|
|
|a n/a
|
| 653 |
|
|
|a TDC
|
| 653 |
|
|
|a bipolar transistor
|
| 653 |
|
|
|a triplex-duplex
|
| 653 |
|
|
|a TMR
|
| 653 |
|
|
|a frequency divider by two
|
| 653 |
|
|
|a 4MR
|
| 653 |
|
|
|a Impulse Sensitive Function
|
| 653 |
|
|
|a single event upset
|
| 653 |
|
|
|a Single-Event Upsets (SEUs)
|
| 653 |
|
|
|a History of engineering and technology / bicssc
|
| 653 |
|
|
|a heavy-ions
|
| 653 |
|
|
|a hardening by design
|
| 653 |
|
|
|a PLL
|
| 653 |
|
|
|a radiation hardening by design (RHBD)
|
| 653 |
|
|
|a proton irradiation
|
| 653 |
|
|
|a ring oscillator
|
| 653 |
|
|
|a neutron irradiation effects
|
| 653 |
|
|
|a protons
|
| 653 |
|
|
|a soft errors
|
| 653 |
|
|
|a SEE testing
|
| 653 |
|
|
|a configuration memory
|
| 653 |
|
|
|a digital integrated circuits
|
| 653 |
|
|
|a X-rays
|
| 653 |
|
|
|a FPGA-based digital controller
|
| 653 |
|
|
|a gain degradation
|
| 653 |
|
|
|a ionization
|
| 653 |
|
|
|a radiation hardening by design
|
| 653 |
|
|
|a triple modular redundancy (TMR)
|
| 653 |
|
|
|a power MOSFETs
|
| 653 |
|
|
|a line buffer
|
| 653 |
|
|
|a error rates
|
| 653 |
|
|
|a proton irradiation effects
|
| 653 |
|
|
|a instrumentation amplifier
|
| 653 |
|
|
|a fault tolerance
|
| 653 |
|
|
|a single event transient (SET)
|
| 653 |
|
|
|a Radiation Hardening by Design
|
| 653 |
|
|
|a single event effects
|
| 653 |
|
|
|a radiation effects
|
| 653 |
|
|
|a radiation-hardening-by-design (RHBD)
|
| 653 |
|
|
|a single-event effects (SEE)
|
| 653 |
|
|
|a nuclear fusion
|
| 653 |
|
|
|a single-event upsets (SEUs)
|
| 653 |
|
|
|a space application
|
| 653 |
|
|
|a total ionization dose (TID)
|
| 653 |
|
|
|a gamma-rays
|
| 653 |
|
|
|a Co-60 gamma radiation
|
| 653 |
|
|
|a frequency synthesizers
|
| 653 |
|
|
|a Image processing
|
| 653 |
|
|
|a CMOS
|
| 653 |
|
|
|a single-shot
|
| 653 |
|
|
|a voltage controlled oscillator (VCO)
|
| 653 |
|
|
|a VHDL
|
| 653 |
|
|
|a reference circuits
|
| 653 |
|
|
|a physical unclonable function
|
| 653 |
|
|
|a total ionizing dose
|
| 653 |
|
|
|a selective hardening
|
| 653 |
|
|
|a sensor readout IC
|
| 653 |
|
|
|a radiation tolerant
|
| 653 |
|
|
|a single event upset (SEU)
|
| 653 |
|
|
|a single event opset (SEU)
|
| 653 |
|
|
|a RFIC
|
| 653 |
|
|
|a heavy ions
|
| 653 |
|
|
|a bandgap voltage reference (BGR)
|
| 653 |
|
|
|a voltage reference
|
| 653 |
|
|
|a soft error
|
| 653 |
|
|
|a total ionizing dose (TID)
|
| 653 |
|
|
|a SRAM-based FPGA
|
| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
|
| 989 |
|
|
|b DOAB
|a Directory of Open Access Books
|
| 500 |
|
|
|a Creative Commons (cc), https://creativecommons.org/licenses/by-nc-nd/4.0/
|
| 028 |
5 |
0 |
|a 10.3390/books978-3-03921-280-4
|
| 856 |
4 |
2 |
|u https://directory.doabooks.org/handle/20.500.12854/57568
|z DOAB: description of the publication
|
| 856 |
4 |
0 |
|u https://www.mdpi.com/books/pdfview/book/1518
|7 0
|x Verlag
|3 Volltext
|
| 082 |
0 |
|
|a 900
|
| 082 |
0 |
|
|a 333
|
| 082 |
0 |
|
|a 600
|
| 082 |
0 |
|
|a 620
|
| 520 |
|
|
|a Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.
|