Emerging Resistive Switching Memories

This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental...

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Bibliographic Details
Main Author: Ouyang, Jianyong
Format: eBook
Language:English
Published: Cham Springer International Publishing 2016, 2016
Edition:1st ed. 2016
Series:SpringerBriefs in Materials
Subjects:
Online Access:
Collection: Springer eBooks 2005- - Collection details see MPG.ReNa
Description
Summary:This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices
Physical Description:VIII, 93 p. 73 illus., 41 illus. in color online resource
ISBN:9783319315720