The Thermoballistic Transport Model A Novel Approach to Charge Carrier Transport in Semiconductors

The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport...

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Bibliographic Details
Main Authors: Lipperheide, Reinhard, Wille, Uwe (Author)
Format: eBook
Language:English
Published: Cham Springer International Publishing 2014, 2014
Edition:1st ed. 2014
Series:Springer Tracts in Modern Physics
Subjects:
Online Access:
Collection: Springer eBooks 2005- - Collection details see MPG.ReNa
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505 0 |a Introduction -- Drift-Diffusion and Ballistic Transport -- Prototype Thermoballistic Model -- Thermoballistic Approach: Concept -- Thermoballistic Approach: Implementation -- Examples -- Summary and Outlook 
653 |a Nanophysics 
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653 |a Condensed Matter Physics 
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653 |a Condensed matter 
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520 |a The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift-diffusion and ballistic  models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of "ballistic configurations" arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms  the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail, and specific examples of interest to current research in semiconductor physics and spintronics are worked out