The Drift Diffusion Equation and Its Applications in MOSFET Modeling
To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. However, the tremendous speed i...
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| Format: | eBook |
| Language: | English |
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Vienna
Springer Vienna
1991, 1991
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| Edition: | 1st ed. 1991 |
| Series: | Computational Microelectronics
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| Subjects: | |
| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- 1 Boltzmann’s Equation
- 1.1 Introduction
- 1.2 Many-Body System in Equilibrium
- 1.3 Non-Equilibrium Green’s Functions
- References
- 2 Hydrodynamic Model
- 2.1 Introduction
- 2.2 Linear Response and Relaxation-Time Approximation
- 2.3 Nonlinear Response and the Moment Method
- 2.4 Summary
- References
- 3 Carrier Transport in an Inversion Channel
- 3.1 Introduction
- 3.2 The Classical Limit ? ? 0
- 3.3 Surface Mobility
- References
- 4 High Energetic Carriers
- 4.1 Introduction
- 4.2 Impact Ionization Scattering Strength
- 4.3 Distribution Function
- 4.4 Impact Ionization Coefficient and Gate Oxide Injection
- References
- 5 Degredation
- 5.1 Introduction
- 5.2 Analyzing a Degraded MOSFET
- 5.3 The Degradation Process
- References
- Appendix 1. Perturbation Theory and Diagram Technique
- Appendix 2. Inversion Channel Particle-Density Distribution in Equilibrium
- Author Index