Analysis and Simulation of Heterostructure Devices
Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency d...
| Main Authors: | , |
|---|---|
| Format: | eBook |
| Language: | English |
| Published: |
Vienna
Springer Vienna
2004, 2004
|
| Edition: | 1st ed. 2004 |
| Series: | Computational Microelectronics
|
| Subjects: | |
| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- 1. Introduction
- 2. State-of-the-Art of Materials, Device Modeling, and RF Devices
- 2.1 State-of-the-Art of Heterostructure RF Device Modeling
- 2.2 State-of-the-Art of Heterostructure Devices and Optimization Potentials
- 3. Physical Models
- 3.1 Sets of Partial Differential Equations
- 3.2 Lattice and Thermal Properties
- 3.3 Band Structure
- 3.4 Carrier Mobility
- 3.5 Energy and Momentum Relaxation
- 3.6 Generation and Recombination
- 4. RF Parameter Extraction for HEMTs and HBTs
- 4.1 RF Parameter Extraction Methods
- 4.2 Contributions to the Small-Signal EquivalentCircuit Element
- 5. Heterojunction Bipolar Transistor
- 5.1 General Considerations
- 5.2 SiGe HBTs
- 5.3 High-Power GaAs HBTs
- 5.4 High-Speed InP HBTs
- 6. High Electron Mobility Transistor
- 6.1 General Considerations
- 6.2 High-Speed and High-Power AlGaAs/InGaAs PHEMTs
- 6.3 High-Speed InAlAs/InGaAs HEMTs on InP and GaAs
- 6.4 High-Power High-Speed AlGaN/GaN HEMTs
- 7. Novel Devices
- 7.1 InP DHBTs with GaAsSb Bases
- 7.2 AlGaN/GaN HBTs
- A. Appendix: Benchmark Structures
- Reference
- List of Figures
- List of Tables