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Ferroelectric Memories

Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied...

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Bibliographic Details
Main Author: Scott, James F.
Format: eBook
Language:English
Published: Berlin, Heidelberg Springer Berlin Heidelberg 2000, 2000
Edition:1st ed. 2000
Series:Springer Series in Advanced Microelectronics
Subjects:
Electronics And Microelectronics, Instrumentation
Metals And Alloys
Memory Management (computer Science)
Applied And Technical Physics
Computer Memory Structure
Computer Networks 
Computer Engineering And Networks
Physics
Metals
Electronics
Computer Engineering
Computer Storage Devices
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
Table of Contents:
  • 1. Introduction
  • 2. Basic Properties of RAMs (Random Access Memories)
  • 3. Electrical Breakdown (DRAMs and NV-RAMs)
  • 4. Leakage Currents
  • 5. Capacitance—Voltage Data: C(V)
  • 6. Switching Kinetics
  • 7. Charge Injection and Fatigue
  • 8. Frequency Dependence
  • 9. Phase Sequences in Processing
  • 10. SBT-Family Aurivillius-Phase Layer Structures
  • 11. Deposition and Processing
  • 12. Nondestructive Read-Out Devices
  • 13. Ferroelectrics-on-Superconductor Devices: Phased-Array Radar and 10–100 GHz Devices
  • 14. Wafer Bonding
  • 15. Electron-Emission and Flat-Panel Displays
  • 16. Optical Devices
  • 17. Nanophase Devices
  • 18. Drawbacks and Disadvantages
  • A. Exercises

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