Two-Dimensional Systems: Physics and New Devices Proceedings of the International Winter School, Mauterndorf, Austria, February 24–28, 1986
| Other Authors: | , , |
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| Format: | eBook |
| Language: | English |
| Published: |
Berlin, Heidelberg
Springer Berlin Heidelberg
1986, 1986
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| Edition: | 1st ed. 1986 |
| Series: | Springer Series in Solid-State Sciences
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| Subjects: | |
| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- Quantum Tunnelling of Electrons Through III–V Heterostructure Barriers
- Recent Results on III–V Superlattices and Quantum Well Structures
- Envelope Function Calculations for Superlattices
- Optical and Electronic Properties of Si/SiGe Superlattices
- Resonant Tunneling Devices and Optoelectronic Ge/Si Superlattice Structures
- IV Bound States in Quantum Wells
- Far Infrared Studies of Shallow Donors in GaAs-AlGaAs Quantum Wells
- Magneto-Impurities and Quantum Wells
- The ?(z) Doping Layer: Impurities in the 2-d World of Layered Systems
- V Quantum Hall Effects and Density of States of Landau Levels
- Quantum Hall Effect Experiments at Microwave Frequencies
- The Fractional Quantum Hall Effect in GaAs-GaAlAs Heterojunctions
- Density of States of Landau Levels from Activated Transport and Capacitance Experiments
- Density of States of Landau Levels fromSpecific Heat and Magnetization Experiments
- The Integer Quantum Hall Effect: An Introduction to the Present State of the Theory
- The Fractional Quantum Hall Effect
- VI New Structures and Devices
- Microwave Performances of GaAlAs/GaAs Heterostructure Devices
- Luminescence and Transport Properties of GaAs Sawtooth Doping Superlattices
- Physics and Applications of Doping Superlattices
- Electronic Excitations in Microstructured Two-Dimensional Systems
- VII High Field Transport and Optical Excitation
- Carrier Transport in Semiconductor Devices of Very Small Dimensions
- Parallel-Transport Experiments in 2D Systems
- Time-Resolved Spectroscopy of Hot Carriers in Quantum Wells
- Index of Contributors
- I Epitaxial Growth: Methods and Characterization
- New Epitaxial Growth Methods and Their Application to Quantum Wells and 2DEG Structures
- Metalorganic MBE — A New Technique for the Growth of III–V Semiconductor Layers
- Recent Developments in MBE Growth and Properties of Hg1-xCdxTe/CdTe Superlattices
- Transport Properties of Two-Dimensional Electron and Hole Gases in GaAs/AlGaAs Heterostructures
- In Situ Study of MBE Growth Mechanisms Using RHEED Techniques — Some Consequences of Multiple Scattering
- Growth Mode and Interface Structure of MBE Grown SiGe Structures
- II Band Discontinuities
- Elementary Tight-Binding Theory of Schottky-Barrier and Heterojunction Band Line-Ups
- Electrical Measurements of Band Discontinuities at Heterostructure Interfaces
- Heuristic Approach to Band-Edge Discontinuities in Heterostructures
- III Resonant Tunnelling, Multi-Quantum-Well and Superlattice Structures