Low Dielectric Constant Materials for IC Applications

Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applicat...

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Bibliographic Details
Other Authors: Ho, Paul S. (Editor), Leu, Jihperng (Editor), Lee, Wei William (Editor)
Format: eBook
Language:English
Published: Berlin, Heidelberg Springer Berlin Heidelberg 2003, 2003
Edition:1st ed. 2003
Series:Springer Series in Advanced Microelectronics
Subjects:
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
Table of Contents:
  • 3.4 Films with Ordered Porous Structure
  • 3.5 Limits of SANS Characterization Methods
  • 3.6 Future Developments
  • 3.7 Conclusion
  • References
  • 4 Vapor Deposition of Low-? Polymeric Dielectrics
  • 4.1 Introduction
  • 4.2 Vapor-Phase Deposition and Polymerization on Substrates
  • 4.3 Parylenes
  • 4.4 Polynaphthalene and Its Derivatives
  • 4.5 Teflon and Its Derivatives
  • 4.6 Vapor-Deposited Polyimides
  • 4.7 Prospects for Vapor-Depositable Low-? Polymers
  • References
  • 5 Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-? Materials
  • 5.1 Introduction
  • 5.2 FSG Films
  • 5.3 a-C:F Films
  • References
  • 6 Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity
  • 6.1 Introduction
  • 6.2 Porous Silica
  • 6.3 Organosilicates
  • 6.4 Porogens
  • 6.5 Porous OrganosilicateMatrix Resins
  • 6.6 Formation of Nanohybrids
  • 6.7 Porous Organosilicates
  • 6.8 Characterization of Porous Organosilicates
  • 1 Overview on Low Dielectric Constant Materials for IC Applications
  • 1.1 Introduction
  • 1.2 Dielectric Constant and Bonding Characteristics
  • 1.3 Material Properties and Integration Requirements
  • 1.4 Characterization of Low-? Dielectrics
  • 1.5 Porous Low-? Materials
  • 1.6 Conclusion
  • References
  • 2 Materials Issues and Characterization of Low-? Dielectric Materials
  • 2.1 Introduction
  • 2.2 Thin-Film Material Characterization
  • 2.3 General Structure-Property Relationships
  • 2.4 Fluorinated Polyimide: Effect of Chemical-Structure Modifications on Film Properties
  • 2.5 Crosslinked and Thermosetting Materials
  • 2.6 Parylene Polymers: Effect of Thermal History on Film Properties
  • 2.7 Future Challenges
  • References
  • 3 Structure and Property Characterization of Low-? Dielectric Porous Thin Films Determined by X-Ray Reflectivity and Small-Angle Neutron Scattering
  • 3.1 Introduction
  • 3.2 Two-Phase Methodology
  • 3.3 Three-Phase Methodology
  • 10.2 SiLK Semiconductor Dielectric
  • 10.3 Subtractive Technologies
  • 10.4 Damascene Technologies
  • 10.5 Cost-of-Ownership
  • 10.6 Conclusion
  • References
  • 6.9 Conclusion
  • References
  • 7 Metal/Polymer Interfacial Interactions
  • 7.1 Introduction
  • 7.2 Experimental Methods
  • 7.3 Metallization of Fluoropolymers
  • 7.4 Polymers on Metals: Adhesion to Cu
  • 7.5 Conclusion
  • References
  • 8 Diffusion of Metals in Polymers and During Metal/Polymer Interface Formation
  • 8.1 Introduction
  • 8.2 Thermodynamic Considerations
  • 8.3 Effect of Metal-Polymer Interaction on the Mobility of Metal Atoms
  • 8.4 Surface Diffusion, Nucleation, and Growth of Metal Films
  • 8.5 Diffusion and Aggregation
  • 8.6 Atomic Diffusion
  • 8.7 Conclusion
  • References
  • 9 Plasma Etching of Low Dielectric Constant Materials
  • 9.1 Introduction
  • 9.2 Technological Requirements and Patterning Approaches
  • 9.3 Fluorocarbon-Based Etching Processes
  • 9.4 Directional Etching of Organic Low-? Materials
  • 9.5 Postetch Mask-Stripping and Via-Cleaning Processes
  • 9.6 Conclusion
  • References
  • 10 Integration of SiLK Semiconductor Dielectric
  • 10.1 Introduction