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140122 ||| eng |
| 020 |
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|a 9781468474121
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| 100 |
1 |
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|a Chamberlain, J.M.
|e [editor]
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| 245 |
0 |
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|a Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures
|h Elektronische Ressource
|c edited by J.M. Chamberlain, L. Eaves, J.C. Portal
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| 250 |
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|a 1st ed. 1990
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| 260 |
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|a New York, NY
|b Springer US
|c 1990, 1990
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| 300 |
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|a 490 p. 147 illus
|b online resource
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| 505 |
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|a The Evolution of Semiconductor Quantum Structures in Reduced Dimensionality — Do-it-Yourself Quantum Mechanics -- The Quantum Hall Effect and Related Problems -- High Magnetic Fields and Low Dimensional Structures: A Survey of Transport and Optical Effects -- Transmission, Reflection and the Resistance of Small Conductors -- Semi-Classical Theory of Magnetoresistance Anomalies In Ballistic Multi-Probe Conductors -- Electron-Boundary Scattering in Quantum Wires -- Vertical Transport, Tunnelling Cyclotron Resonance, and Saturated Mini-Band Transport in Semiconductor Superlattices -- Magnetoquantum Oscillations in a Lateral Superlattice -- Techniques for Lateral Superlattices -- Magnetoconductance Oscillations Linear in ?B in Semiconductor-Surface Superlattices -- Quantum Device Modeling with the Convolution Method -- Quantum Transport and Dynamics for Bloch Electrons in Electric Fields -- Recent Advances in Microfabrication -- to Resonant Tunnelling in Semiconductor Heterostructures -- The Background to Resonant Tunnelling Theory -- High-Frequency Applications of Resonant-Tunnelling Devices -- Traversal, Reflection and Dwell Time for Quantum Tunnelling -- Dynamic Polarization Effects in Tunneling -- Optical Probes of Resonant Tunneling Structures -- Advanced Materials Technology for the Next Decade’s OEICs -- Optical Properties of Ge-Si Superlattices -- Ultra-Fast Optical Probes in Quantum Wells and Superlattices -- Ballistic Electron Transport in the Plane -- Static and Dynamic Conductivity of Inversion Electrons in Lateral Superlattices -- Quantum Ballistic Electron Transport and Conductance Quantisation in a Constricted Two Dimensional Electron Gas -- Adiabatic Transport in the Fractional Quantum Hall Regime -- Ballistic Electron Transport in GaAs-AlGaAs Heterojunctions -- Lecturers.-Participants (and group photograph)
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| 653 |
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|a Atoms
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| 653 |
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|a Spectrum analysis
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| 653 |
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|a Atomic, Molecular and Chemical Physics
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| 653 |
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|a Condensed Matter Physics
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| 653 |
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|a Spectroscopy
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| 653 |
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|a Electrical and Electronic Engineering
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| 653 |
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|a Electrical engineering
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| 653 |
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|a Crystallography
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| 653 |
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|a Condensed matter
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| 653 |
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|a Crystallography and Scattering Methods
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| 653 |
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|a Molecules
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| 700 |
1 |
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|a Eaves, L.
|e [editor]
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| 700 |
1 |
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|a Portal, J.C.
|e [editor]
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| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b SBA
|a Springer Book Archives -2004
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| 490 |
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|a NATO Science Series B:, Physics
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| 028 |
5 |
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|a 10.1007/978-1-4684-7412-1
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| 856 |
4 |
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|u https://doi.org/10.1007/978-1-4684-7412-1?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
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|a 539
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| 520 |
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|a This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures
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