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Physics and Chemistry of III-V Compound Semiconductor Interfaces

The application of the 111-V compound semiconductors to device fabrica­ tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is...

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Bibliographic Details
Other Authors: Wilmsen, Carl (Editor)
Format: eBook
Language:English
Published: New York, NY Springer US 1985, 1985
Edition:1st ed. 1985
Subjects:
Spectrum Analysis
Condensed Matter Physics
Spectroscopy
Condensed Matter
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
Table of Contents:
  • 1. III-V Semiconductor Surface Interactions
  • 1. Introduction
  • 2. Interface States and Schottky Barriers
  • 3. Clean Surfaces of III-V Semiconductors
  • 4. Adsorption of Gases on Clean III-V Semiconductors
  • 5. Metal Films on Clean III-V Surfaces
  • 6. The Electrical Nature of Intimate Interfaces
  • 7. Conclusions
  • References
  • 2. Schottky Diodes and Ohmic Contacts for the III-V Semiconductors
  • 1. Introduction
  • 2. Electrical Properties of Metal-Semiconductor Contacts
  • 3. Schottky-Diode Technology
  • 4. Ohmic-Contact Technology
  • References
  • 3. The Deposited Insulator/III-V Semiconductor Interface
  • 1. Introduction
  • 2. General Overview of the Deposited Insulator/III-V Interface
  • 3. Choice of Insulator and Deposition Technique
  • 4. Interfacial Properties
  • 5. Experimental Results
  • 6. Concluding Remarks
  • References
  • 4. Electrical Properties of Insulator-Semiconductor Interfaces on III-V Compounds
  • 1. Introduction
  • 2. Theoretical Background
  • 3. Gallium Arsenide
  • 4. Indium Antimonide
  • 5. Indium Phosphide
  • 6. Indium Arsenide
  • 7. Gallium Phosphide
  • 8. Gallium Arsenide Phosphide
  • 9. Whither Surface States
  • 10. Low-Temperature Deposition of Dielectric Layers
  • 11. Conclusion
  • References
  • 5. III-V Inversion-Layer Transport
  • 1. Introduction
  • 2. Quantization
  • 3. Surface Scattering Mechanisms
  • 4. Phonon Scattering
  • 5. Experimental Results
  • Summary
  • References
  • 6. Interfacial Constraints on III-V Compounds MIS Devices
  • 1. Introduction
  • 2. Dielectric-Semiconductor Interfacial Phenomena
  • 3. MIS-Device Characteristics
  • 4. Device Results
  • 5. Epilogue
  • References
  • 7. Oxide/III-V Compound Semiconductor Interfaces
  • 1. Introduction
  • 2. The Chemically Cleaned Surface
  • 3. Thermal Oxides
  • 4. Anodic Oxides
  • 5. Plasma-Grown Oxide
  • References

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