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|a 9781468428025
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|a Henderson, B.
|e [editor]
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|a Defects and Their Structure in Nonmetallic Solids
|h Elektronische Ressource
|c edited by B. Henderson
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| 250 |
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|a 1st ed. 1976
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| 260 |
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|a New York, NY
|b Springer US
|c 1976, 1976
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| 300 |
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|a XI, 503 p. 116 illus
|b online resource
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|a Point Defects in Non-Metals: The Role of Structure -- Point Defects and Diffusion -- From Spectroscopy to Microscopy — The Photon as a Probe -- Optical Techniques and an Introduction to the Symmetry Properties of Point Defects -- Magnetic Resonance Studies of Vacancy Centers in Ionic Crystals -- Interstitial Centres: Optical Absorption and Magnetic Resonance -- EPR Studies of Lattice Defects in Semiconductors -- Infrared Studies of Defects -- Vacancy Aggregate Centers in Ionic Crystals -- Perturbation Spectroscopy and Optical Detection of Paramagnetic Resonance -- Excited State Properties of Localized Centres -- Internal Friction and Defects Near Dislocations -- Defects in Non-Crystalline Oxides -- Insulator and Semiconductor Surfaces -- Structural Information and Defect Energies Studied by X-Ray Methods -- X-Rays and Electron Microscopy -- Transmission Electron Microscopy of Defect Aggregates in Non-Metallic Crystalline Solids -- Appendix I. Contributed Papers -- Appendix II. References - Defects in Non-Metallic Solids -- Appendix III. Participants at NATO Advanced Study Institute, Exeter, 1975
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| 653 |
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|a Spectrum analysis
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| 653 |
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|a Condensed Matter Physics
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| 653 |
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|a Spectroscopy
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| 653 |
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|a Condensed matter
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| 041 |
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|a eng
|2 ISO 639-2
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| 989 |
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|b SBA
|a Springer Book Archives -2004
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| 490 |
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|a NATO Science Series B:, Physics
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| 028 |
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|a 10.1007/978-1-4684-2802-5
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| 856 |
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|u https://doi.org/10.1007/978-1-4684-2802-5?nosfx=y
|x Verlag
|3 Volltext
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|a 530.41
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|a The Advanced Study Institute of which this volume is the proceedings was held at the University of Exeter during 24 August to 6 September 1975. There were seventy participants of whom eighteen were lecturers and members of the advisory committee. All NATO countries except Holland, Iceland and Portugal were re presented. In addition a small number of participants came from non-NATO countries Japan, Ireland and Switzerland. An aim of the organising committee was to bring together scientists of wide interests and expertise in the defect structure of insulators and semiconductors. Thus major emphases in the pro gramme concerned the use of spectroscopy and microscopy in revealing the structure of point defects and their aggregates, line defects as well as planar and volume defects. The lectures revealed that in general little is known of the fate of the interstitial in most irradiated solids. Nor are the dynamic properties of defects under stood in sufficient detail that one can state how point defects cluster and eventually become macroscopic defects. Although this book faithfully reproduces the material covered by the invited speakers, it does not really follow the flow of the lectures. This is because it seemed advisable for each lecturer to provide a single self-contained and authoritative manuscript, rather than a series of short articles corresponding to the lectures
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