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04905nmm a2200301 u 4500 |
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140122 ||| eng |
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|a 9781461587231
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|a Jaffee, Robert
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| 245 |
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|a Defects and Transport in Oxides
|h Elektronische Ressource
|c by Robert Jaffee
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| 250 |
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|a 1st ed. 1974
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| 260 |
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|a New York, NY
|b Springer US
|c 1974, 1974
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| 300 |
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|a XV, 611 p. 52 illus
|b online resource
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|a 1. Diffusional Growth of Oxide Scales on Binary Alloys -- 2. The Importance of Short-Circuit and Related Transport Processes in High-Temperature Oxidation -- 3. Defects and Impurities Influences on Phase Transformations in Rare Earth Oxides -- 4. Interdiffusion and Association Phenomena in Some Oxide Systems -- 5. Ionic Conduction in Oxides at Low Temperatures -- Agenda Discussion: Oxidation, Solid Reactions, Electrochemistry -- Six CONCLUDING DISCUSSION: CRITICAL ISSUES -- Concluding Discussion: Critical Issues -- Author Index -- Chemical Index
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|a One INTRODUCTORY LECTURES -- 1. Defect Thermodynamics - Historical -- 2. The Real Structure of Defect Solids -- 3.Electron Transport in Transition-Metal and Rare-Earth Oxides -- 4. Solid-State Reactions Between Oxides -- 5.Point Defects in Oxides -- Banquet Address: Scientific Understanding of the Manufacture and Properties of Solid Oxidic Industrial Materials -- Two THEORY AND CHARACTERIZATION -- 1. Calculation of Defect-Formation Energies in Alkaline-Earth Oxides: Interionic Forces -- 2. Concentrated Defects in PuO2 -- 3. The Defect Structure of Transition-Metal Monoxides -- 4. High-Resolution Electron Microscopy of Defects and Disorder in Crystals -- 5.Vacancy-Related Defects in the Alkaline-Earth Oxides -- 6. Defect Characterization by Indirect Experimental Techniques -- Agenda Discussion: Theory and Characterization of Defects and Transport in Oxides -- Three TRANSPORT OF MASS AND CHARGE -- 1. Electrical Conductivity and, Diffusion in Some Transition-Metal Oxides --
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|a 2. Diffusion-Path Networks in the Wurtzite Lattice -- 3. Some Aspects of Electrical Properties of Metal Oxides -- 4. Growth of Pure Crystals of NiO and Measurement of Their Drift Mobility -- 5. Defect Structure and Electrical Conductivity of Crystalline Ferrous Silicate -- Agenda Discussion: Transport of Mass and Charge -- Four DEFECT DEPENDENT PROCESSES I (Creep & Sintering) -- 1. Nonstoichiometry and Doping in the Sintering of Oxides -- 2. Final Stage Sintering and Grain Growth in Oxides -- 3. Approaches to Describing the Kinetic Behavior of Distributions of Second-Phase Inclusions -- 4. Precipitation Hardening in Ceramics -- 5. Development of Substructures During Creep and Effect of Ionic Defects and Precipitates on the Strength of Magnesium Oxide -- 6. The Influence of Stoichiometric Defects on the Creep of Oxides With the Fluorite Structure -- Agenda Discussion: Creep and Sintering -- Five DEFECT DEPENDENT PROCESSES II (Oxidation, Solid State Reactions, Electrochemistry) --
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|a Materials / Analysis
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|a Characterization and Analytical Technique
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|a eng
|2 ISO 639-2
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| 989 |
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|b SBA
|a Springer Book Archives -2004
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|a Battelle Institute Materials Science Colloquia
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|a 10.1007/978-1-4615-8723-1
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|u https://doi.org/10.1007/978-1-4615-8723-1?nosfx=y
|x Verlag
|3 Volltext
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|a 620.112
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| 520 |
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|a DEFECTS AND TRANSPORT IN OXIDES is the proceedings of the eighth Battelle Colloquium in the Materials Sciences, held in Columbus and Salt Fork, Ohio, September 17-22, 1973. It took as its theme the relationship between defects and transport of both mass and charge in oxides. Applications of defect-controlled transport to a number of important processes in oxides also were covered. In selecting this topic, the Organizing Committee thought that 1973 was timely to bring together the leading theoretical and experimental researchers in the oxide transport field to review its status in a critical way, and to consider current major research directions and how research in the future might be guided into fruitful areas. The meeting was highlighted by the presentation of several papers which suggest that major advances in our understanding of transport in oxides appear to be imminent. These papers dealt with the results of new theoretical approaches whereby the energies and configurations of defects may be calculated, and with new experimental techniques for indirectly observing these defects, previously thought to be below the limits of experimental resolving power. Other papers, dealing with the application of defect chemistry to technological processes, served to demonstrate the successes and to point out yet unresolved problems associated with ix x PREFACE understanding the chemistry of imperfect crystals
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