Microwave Semiconductor Devices

We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receivin...

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Main Author: Yngvesson, Sigfrid
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: New York, NY Springer US 1991, 1991
Edition:1st ed. 1991
Series:The Springer International Series in Engineering and Computer Science
Subjects:
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
Table of Contents:
  • intrinsic conversion loss
  • Parasitic element effects in semiconductor mixers
  • Noise figure/noise temperature of mixer receivers
  • Other types of mixers
  • Noise temperature versus frequency for mixers
  • Varactor harmonic multipliers
  • PIN diodes and microwave control devices
  • Problems, Chapter 9
  • References
  • Further reading
  • 10 MESFET Devices
  • I-V-characteristics of MESFETs
  • Small-signal equivalent circuit model
  • Ultra-fast electrons, or how ballistic can an electron be
  • The Fukui noise model for MESFETs
  • The Pucel-Haus-State noise model
  • Noise in FET oscillators
  • Power-frequency limitations in MESFETs
  • Overview
  • Problems, Chapter 10
  • References
  • Further reading
  • 11 HFETs — Heterojunction Field Effect Transistors
  • Discussion of the I-V-characteristics of a HFET
  • Transconductance and cut-off frequencies for HFETs
  • Indium-based heterostructures for HFETs
  • Microwave equivalent circuit for HFETs
  • Noise modeling of HFETs - comparison with MESFETs
  • Review of noise data for HFETs and MESFETs
  • HFET power amplifiers
  • HFET oscillators
  • Overview
  • Problems, Chapter 11
  • References
  • Further reading
  • 12 Bipolar microwave transistors
  • Basic relations for microwave BJTs
  • Equivalent circuit of the BJT — frequency-performance
  • Doping profiles for IMPATT diodes
  • An analytical large-signal model of IMPATT devices
  • Non-steady state large signal models for IMPATT devices
  • Problems, Chapter 3
  • References
  • Additional reading
  • 4 Tunneling devices
  • Tunnel diodes
  • Resonant tunneling devices
  • Problems, Chapter 4.
  • References
  • Further reading
  • 5 Fundamental limitations on power output from solid-state microwave devices
  • The thermal limit
  • The electronic limit
  • Measured data for rf power
  • Problems, Chapter 5
  • References
  • 6 Basic properties and circuit aspects of oscillators and amplifiers based on two-terminal devices
  • A basic oscillator model
  • Injection locking of oscillators
  • Model for FM— and AM—noise in oscillators
  • Actual noise observed in two—terminal solid state devices
  • Electronic tuning of solid state oscillators
  • Examples of actual circuits and impedance diagrams for GUNN and IMPATT oscillators
  • Negative resistance devices used as amplifiers
  • Noise modeling of BJTs
  • BJT power amplifiers and oscillators
  • Heterojunction bipolar transistors (HBTs)
  • Structure and I-V-characteristics of HBTs
  • Equivalent circuit and cut-off-frequencies of HBTs
  • HBTs with other material combinations than A1GaAs/GaAs
  • Noise properties of HBTs
  • HBT power amplifiers and oscillators
  • Overview
  • Problems, Chapter 12
  • References
  • Further reading
  • 13 Overview of conventional and novel devices
  • Hot electron transistors
  • Resonant tunneling transistors
  • Permeable base transistors
  • Review of the performance of microwave semiconductor devices — 1990
  • Conclusion
  • References
  • Further reading
  • Growth rate of a high-field dipole Domain — the “equal areas” rule
  • Stationary domain at the anode
  • Problems, Chapter 2
  • References
  • Further reading
  • 3 IMPATT (Impact Avalanche Transit Time) devices
  • Operation of IMPATT devices-physical discussion
  • Small-signal theory of IMPATT device impedance
  • Estimate of the power conversion efficiency of IMPATT devices — a simple large signal model