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140122 ||| eng |
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|a 9781461528227
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| 100 |
1 |
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|a Balkan, N.
|e [editor]
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| 245 |
0 |
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|a Negative Differential Resistance and Instabilities in 2-D Semiconductors
|h Elektronische Ressource
|c edited by N. Balkan, B.K. Ridley, A.J. Vickers
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| 250 |
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|a 1st ed. 1993
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| 260 |
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|a New York, NY
|b Springer US
|c 1993, 1993
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| 300 |
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|a 454 p. 21 illus
|b online resource
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| 505 |
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|a Negative Differential Resistance: A Brief History and Review -- Electronic Transport in Semiconductors at High Energies: Effects of the Energy Band Structure -- Theory of Oscillatory Instabilities in Parallel and Perpendicular Transport in Heterostructures -- Light Emitting Logic Devices Based on Real Space Transfer in Complementary InGaAs/InAlAs Heterostructures -- Electron Mobility in Delta-Doped Quantum Well Structures -- Application of a New Multi-Scale Approach to Transport in a GaAs/AlAs Heterojunction Structure -- Negative Differential Resistance, Instabilities and Current Filamentation in GaAs/AlxGa1-xAs Heterojunctions -- Hot Electron Instabilities in QWs: Acoustoelectric Effect and Two-Stream Plasma Instability -- Hybrid Optical Phonons in Lower Dimensional Systems and their Interaction with Hot Electrons -- Negative Differential Resistance in Superlattice and Heterojunction Channel Conduction Devices -- Electronic Transport in a Laterally Patterned Resonant Structure --
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| 505 |
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|a Temperature-Dependent Screening Calculation of Hot-Electron Scattering in Heavily Doped Semiconductors -- Optical Measurements of Carrier Mobilities in Semiconductors using Ultrafast Photoconductivity -- A Time-Dependent Approach for the Evaluation of Conductance in Two Dimensions -- Hierarchy of Current Instabilities in the Impact Ionization Avalanche in Semiconductors -- Impact Ionization of Excitons and Donors in Center-Doped Al0.3Ga0.7As/GaAs Quantum Wells -- Hot Exciton Luminescence in Quantum Wells as a Spectroscopic Tool -- Combined Quantum Mechanical-Classical Modelling of Double Barrier Resonant Tunneling Diodes
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| 505 |
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|a Travelling Domains in Modulation-Doped GaAs/AlGaAs Heterostructures -- Negative Differential Resistance and Domain Formation in Semiconductor Superlattices -- High Frequency DC Induced Oscillations in 2D -- Hot Electron Induced Impact Ionization and Light Emission in GaAs based Mesfet’s, Hemt’s, PM-Hemt’s, and HBT’s -- Negative Differential Resistance, High Field Domains and Microwave Emission in GaAs Multi-Quantum Wells -- On Negative Differential Resistance and Spontaneous Dissipative Structure Formation in the Electric Breakdown of p-Ge at Low Temperatures -- Dissipative Structures in Bistable Electronic and Optoelectronic Semiconductor Devices -- NDR, Hot Electron Instabilities and Light Emission in LDS -- Light Emission and Domain Formation in Real-Space Transfer Devices -- Hot Electrons in ?-DopedGaAs -- Optical Phonon Modes in Semiconductor Quantum Wells and Superlattices -- Plasmons on Laterally Drifting 2DEGs --
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| 653 |
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|a Spectrum analysis
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| 653 |
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|a Condensed Matter Physics
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| 653 |
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|a Spectroscopy
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| 653 |
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|a Electrical and Electronic Engineering
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| 653 |
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|a Electrical engineering
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| 653 |
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|a Optical Materials
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| 653 |
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|a Optical materials
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| 653 |
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|a Crystallography
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| 653 |
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|a Condensed matter
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| 653 |
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|a Crystallography and Scattering Methods
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| 700 |
1 |
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|a Ridley, B.K.
|e [editor]
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| 700 |
1 |
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|a Vickers, A.J.
|e [editor]
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| 041 |
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7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b SBA
|a Springer Book Archives -2004
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| 490 |
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|a NATO Science Series B:, Physics
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| 028 |
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|a 10.1007/978-1-4615-2822-7
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| 856 |
4 |
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|u https://doi.org/10.1007/978-1-4615-2822-7?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
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|a 621.3
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| 520 |
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|a Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment
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