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140122 ||| eng |
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|a 9781461341963
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|a Chernow, Fred
|e [editor]
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| 245 |
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|a Ion Implantation in Semiconductors 1976
|h Elektronische Ressource
|c edited by Fred Chernow
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| 250 |
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|a 1st ed. 1977
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| 260 |
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|a New York, NY
|b Springer US
|c 1977, 1977
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| 300 |
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|a XIV, 754 p
|b online resource
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|a Compound Semiconductors -- Formation of New Radiative Recombination Centers in AlXGal-XAs by Nitrogen-Ion Implantation -- Effects of Dual Implantations and Annealing Atmosphere on Lattice Locations and Atom Profiles of Sn and Sb Implanted in GaP -- Implantation of Be, Cd, Mg and Zn in GaAs and GaAs l-XPX -- Effects of Electrically and Optically Inactive Ion Implantation in N-GaAsl-X_XPX (x?0.37) on Photoluminescent Properties -- Electrical and Photoluminescence Properties of Be-Implanted GaAs and GaAs0.62 P0. 38 -- Ag-Ion Implantation into ZnSe -- Resistance Control of SnO2 Films by Ion Implantation -- Ion-Bombardment of Amorphous Semiconductors and Related Evolution of Structural and Electrical Properties -- MISStructure in As+ Implanted CdS -- Long Range Migration of Defects During Low Temperature Boron Implantation in ZnTe -- Profiles -- Structural Rearrangement in Dielectric Films Under Ion Bombardment -- About the Determination of Lattice Defects in Backscattering Experiments --
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| 505 |
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|a Nitrogen Implantation into Molybdenum: Superconducting Properties and Compound Formation -- Ion Trapping, Sputtering and Structural Changes in O2+ and N2+ Bombardment of Polycrystalline Aluminium Films -- Implantation of Co into Aluminum: Damage and Lattice Location Studies -- Dechanneling by Dislocations in Zn-Implanted Al -- Insulators -- Ion-Implantation in Piezoelectric Substrates -- Association of the 6-eV Optical Band in Sapphire with Oxygen Vacancies -- Thermoluminescence of Ion-Implanted SiO2 -- Studies of Radiation Damage Produced by Ion Implantation in Sapphire -- The Structure Damage, Phase Formation and Si Depth Distribution in the Implanted Natural Diamond -- Expansion of Thermally Grown SiO2 Thin Films Upon Irradiation With Energetic Ions -- Recoil Implantation -- Recoil Implantation -- Application of the Boltzmann Transport Equation to the Calculation of Range Profiles and Recoil Implantation in Multilayered Media --
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|a Silicon Implantation -- Annealing Behaviors of Phosphorus Implanted in Silicon -- Sheet Resistivity and Hall Effect Measurements of Aluminium Implanted Silicon and Silicon Films on Sapphire -- Annealing of Room Temperature Implants of Indium in Silicon -- Electrical and Electron Microscope Studies of Boron Molecular Ion Implants Into Silicon -- Properties of Amorphous Silicon Layers Formed by Ion Implantation and Vapor Deposition -- Enhanced and Inhibited Oxidation of Implanted Silicon -- High Dose Implantation of Au and Cu into Si Studied by Auger Electron and Backscattering Spectroscopies -- Defects Introduced Into Silicon by Boron Implantation in the MeV Energy Range -- GaAs -- Vacancy-Impurity Complexes in Implanted and High Temperature Annealed n-GaAs -- Sulfur Ion Implantation in Gallium Arsenide -- Radiotracer Profiles in Sulfur Implanted GaAs -- Electrical Properties of Cd- and Te-Implanted GaAs --
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|a Residual Damage in Silicon Implanted and Post-Annealed Silicon -- Recovery of Radiation Damage Produced by Phosphorus Implantation in Silicon: T.E.M. and Proton Back-Scattering Analysis -- Radiation Damage of 50–250 keV Hydrogen Ions in Silicon -- Anomalous Annealing Behavior of Secondary Defects in Si Implanted with As Ions Through Dielectric Layer -- Analysis of Defect Structures in Recrystallized Amorphous Layers of Self-Ion Irradiated Silicon by Channeling and Transmission Electron Microscopy Measurements -- Dependence of Residual Damage in “Through-Oxide” Implants on Substrate Orientation and Anneal Sequence -- Devices -- Use of Ion Implantation in Device Fabrication at Hitachi CRL -- Sb+-Implanted Buried Layer Beneath Thick Oxide Applied for Vertical FET -- Ion Implanted Solar Cells -- The Electrical Effects of Radiation Damage Near the Interface of Schottky Barrier Contacts -- Novel Microfabrication Process Without Lithography Using an Ion-Projection System --
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|a Preferential Sputtering and Recoil Implantation During Depth Profiling -- The Influence of Recoil Implantation of Absorbed Oxygen on the Entrapment of Xenon in Aluminum and Silicon -- Formation of Highly-Doped Thin Layers by Using Knock-on Effect -- H. Ishiwara, S. Furukawa -- Damage Production and Annealing in Ion Implanted Si-SiO2 Structure as Studied by EPR -- Anomalous Residual Defects in Silicon After Annealing of Through-Oxide Phosphorus Implantations -- Silicon Damage -- Divacancy Formation by Polyatomic Ion Implantation -- Investigation of Ion Implantation Damage with X-Ray Double Reflection -- EPR Study of Oxygen-Implanted Silicon -- EPR of the Lattice Damage From Energetic Si in Silicon at 4 K -- Internal Friction Study of Vacancy-Oxygen Centers in Ion-Implanted Silicon -- Annealing of Defects in Ion Implanted Layers by Pulsed Laser Radiation -- Annealing Behavior of Proton Bombardment Damage in P-Type Silicon --
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|a Heavy Ion Ranges in Silicon and Aluminium -- Range Distributions and Electronic Stopping Powers of Energetic 14N+ Ions -- A Theoretical Approach to the Calculation of Impurity Profiles for Annealed, Ion-Implanted B in Si -- Boron Profiles and Diffusion Behavior in SiO2-Si Structures -- Anomalous Redistribution of Ion-Implanted Dopants
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| 505 |
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|a Characteristics of Implanted n-Type Profiles in GaAs Annealed in a Controlled Atmosphere -- Photoluminescence of Cd-Ion Implanted GaAs -- Some Structural and Electrical Characteristics of GaAs Annealed After Implantation With Be, Mg, Zn and Cd -- Impurity Distribution of Ion-Implanted Be in GaAs by SIMS, Photoluminescence, and Electrical Profiling -- Dual Species Ion Implantation Into GaAs -- Lateral Spread of the Proton Isolation Layer in GaAs -- Metals -- Metallurgical Applications of Ion Implantation -- Solubility Enhancement in Ion Implanted Cu Alloys -- Dose Rate Effects in a Precipitation Hardened Nickel-Aluminium Alloy -- AlSb Preciptate Evolution During Sb Implantation in Al: Experiment and Theory -- Formation of Corrosion-Resistant Surface Alloys by Implantation of Low-Energy Chromium and Nickel Ions Into Polycrystalline Iron -- Ion Implantation Induced Disorder in Ni Studied by Rutherford Backscattering and Electron Microscopy --
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| 653 |
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|a Spectrum analysis
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| 653 |
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|a Condensed Matter Physics
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| 653 |
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|a Spectroscopy
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| 653 |
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|a Condensed matter
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| 041 |
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7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b SBA
|a Springer Book Archives -2004
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| 028 |
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|a 10.1007/978-1-4613-4196-3
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| 856 |
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|u https://doi.org/10.1007/978-1-4613-4196-3?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
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|a 530.41
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| 520 |
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|a The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976. Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries. As has become the custom at these conferences, the sessions were intense with the coffee breaks and evenings given to informal meetings among the participants. It was a time to renew old friendships, begin new ones, exchange ideas, personally question authors of papers that appeared in the literature since the last conference and find out what was generally happening in Ion Implantation. In recent years it has beome more difficult to get funding to travel to such meetings. To assist the participating authors financial aid was solicited from industry and the Office of Naval Research. We are most grateful for their positive response to our requests. The success of the conference was in part due to their generous contributions. The Program Committee had the unhappy task of the reviewing of more than 170 abstracts. The result of their labors was well worth their effort. Much thanks goes to them for molding the conference into an accurate representation of activities in the field. Behind the scenes in Boulder, local arrangements were handled ably by Graeme Eldridge. The difficulty of this task cannot be overemphasized. Our thanks to him for a job well done
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