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Polycrystalline Silicon for Integrated Circuit Applications

Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used...

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Bibliographic Details
Main Author: Kamins, Ted
Format: eBook
Language:English
Published: New York, NY Springer US 1988, 1988
Edition:1st ed. 1988
Series:The Springer International Series in Engineering and Computer Science
Subjects:
Electrical And Electronic Engineering
Electrical Engineering
Optical Materials
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
Table of Contents:
  • 1 Deposition
  • 1.1 Introduction.
  • 1.2 Thermodynamics and kinetics
  • 1.3 The deposition process
  • 1.4 Gas-phase and surface processes
  • 1.5 Reactor geometries
  • 1.6 Reaction
  • 1.7 Deposition of doped films
  • 1.8 Step coverage
  • 1.9 Enhanced deposition techniques
  • 1.10 Summary
  • 2 Structure
  • 2.1 Nucleation
  • 2.2 Surface diffusion and structure
  • 2.3 Evaluation techniques
  • 2.4 Grain structure
  • 2.5 Grain orientation
  • 2.6 Optical properties
  • 2.7 Etch rate
  • 2.8 Stress
  • 2.9 Thermal conductivity
  • 2.10 Structural stability
  • 2.11 Epitaxial realignment
  • 2.12 Summary
  • 3 Dopant Diffusion and Segregation
  • 3.1 Introduction
  • 3.2 Diffusion mechanism
  • 3.3 Diffusion in polysilicon
  • 3.4 Diffusion from polysilicon
  • 3.5 Interaction with metals
  • 3.6 Dopant segregation at grain boundaries
  • 3.7 Summary
  • 4 Oxidation
  • 4.1 Introduction
  • 4.2 Oxide growth on polysilicon
  • 4.3 Conduction through oxide on polysilicon
  • 4.4 Summary
  • 5 Electrical Properties
  • 5.1 Introduction
  • 5.2 Undoped polysilicon
  • 5.3 Moderately doped polysilicon
  • 5.4 Grain-boundary modification
  • 5.5 Heavily doped polysilicon films
  • 5.6 Minority-carrier properties
  • 5.7 Summary
  • 6 Applications
  • 6.1 Introduction
  • 6.2 Silicon-gate technology
  • 6.3 Nonvolatile memories
  • 6.4 High-value resistors
  • 6.5 Fusible links
  • 6.6 Polysilicon contacts
  • 6.7 Bipolar integrated circuits
  • 6.8 Device isolation
  • 6.9 Trench capacitors
  • 6.10 Polysilicon diodes
  • 6.11 Polysilicon transistors
  • 6.12 Polysilicon sensors
  • 6.13 Summary

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