Evaluation of Advanced Semiconductor Materials by Electron Microscopy
The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characteri...
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| Format: | eBook |
| Language: | English |
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New York, NY
Springer US
1989, 1989
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| Edition: | 1st ed. 1989 |
| Series: | NATO Science Series B:, Physics
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| Subjects: | |
| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- High Resolution Electron Microscopy
- HREM of Edge-on Interfaces and Defects
- Image Processing Applied to HRTEM Images of Interfaces
- II-VI Semiconductor Interfaces
- High Resolution Electron Microscopy Study of Indium Distribution in InAs/GaAs Multilayers
- Convergent Beam Electron Diffraction
- Convergent Beam Electron Diffraction Studies of Defects, Strains and Composition Profiles in Semiconductors
- HOLZ Diffraction from Semiconductor Superlattices
- Determination of Composition and Ionicity by Critical Voltage and Other Electron Diffraction Methods
- Measurement of Structure-Factor Phases by Electron Diffraction for the Study of Bonding in Non-Centrosymmetric Semiconductors
- X-ray and Electron Energy Loss Microanalysis
- EDX and EELS Studies of Segregation in STEM
- Cathodoluminescence and Electron Beam Induced Conductivity
- TEM-Cathodoluminescence Study of Single and Multiple Quantum Wells of MBE Grown GaAs/AlGaAs
- Low Energy Electron Microscopy (LEEM) and Photoemission Microscopy (PEEM) of Semiconductor Surfaces
- Transmission Electron Microscopy of In-Situ Deposited Films on Silicon
- Surface Studies by SEM and STEM
- Transmission and Reflection Electron Microscopy on Cleaved Edges of III-V Multilayered Structures
- Defects in Heteroepitaxy
- Dislocation Generation and Elimination in GaAs on Si
- The Microstructure of GaAs/Si Films Studied as a Function of Heat Treatment
- Electron Microscopy of Gex Sil-x/Si Strained Layer Superlattices
- Defect Structure in Low and High Misfit Systems
- In-Situ Electron Microscope Studies of Misfit Dislocation Introduction into Gex Sil-x/Si Heterostructures
- Misfit Dislocations in Inx Gal-x As/GaAs Heterostructures near the Critical Thickness
- Summary of Discussion on Instrumental Requirements for the Evaluation of Advanced Semiconductors by Electron Microscopy
- EBIC Studies of Individual Defects in Lightly Doped Semiconductors CdTe as an Example
- Schottky Barriers
- Electronic Structure and Fermi Level Pinning Obtained with Spatially Resolved Electron Energy Loss Scattering
- Epitaxial NiSi2 and CoSi2 Interfaces
- Further Analysis of Interfaces
- The Fresnel Method for the Characterisation of Interfaces
- Strains and Misfit Dislocations at Interfaces
- Ordering/decomposition/analysis of local strains
- TEM and STEM Observations of Composition Variations in III-V Semiconductors
- Transmission Electron Microscopy and Transmission Electron Diffraction Studies of Atomic Ordering in Group III-V Compound Semiconductor Alloys
- Elastic Relaxation and TEM Image Contrasts in Thin Composition-Modulated Semiconductor Crystals
- Surface Microscopy and Diffraction
- Surface and Thin Film Growth Studied by ReflectionHigh Energy Electron Diffraction