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Thyristor Physics

In this volume I attempt to present concisely the physical principles underlying the operation and performance characteristics of the class of semiconductor p-n-p-n switches known as thyristors. The semiconductor controlled rectifier (SCR), the triode AC switch (Triac) the gate turn-off switch (GTO)...

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Bibliographic Details
Main Author:	Blicher, A.
Format:	eBook
Language:	English
Published:	New York, NY Springer New York 1976, 1976
Edition:	1st ed. 1976
Series:	Applied Physics and Engineering, An International Series
Subjects:	Physics And Astronomy Engineering Physics Technology And Engineering Astronomy
Online Access:	https://doi.org/10.1007/978-1-4612-9877-9?nosfx=y
Collection:	Springer Book Archives -2004 - Collection details see MPG.ReNa

Table of Contents:

5.3 Charge-control model of a p-n-p-n structure
5.4 Delay time
5.5 Rise time with a resistive load
5.6 Rise time with inductive load
5.7 Propagation of the on state
6 The Nongated, Undesirable Thyristor Triggering
6.1 Introduction
6.2 Thermal turn on
6.3 Light triggering
6.4 Voltage triggering
7 Thyristor Voltage Drop in the On State
7.1 Introduction
7.2 Herlet’s closed-form p-i-n diode analysis
7.3 Kokosa’s numerical analysis
7.4 Numerical analysis of Cornu and Lietz
7.5 Otsuka’s forward-drop analysis
8 SCR Turn-off Transient
8.1 Introduction
8.2 Storage time ts1
8.3 Fall time tf1
8.4 Storage time ts2
8.5 Fall time tf2
8.6 Effect of the gate current
8.7 Simplified approaches
8.8 Experimental data
9 Gate Turn-off Thyristor (GTO)
9.1 Introduction
9.2 Plasma-pinchingmechanism
9.3 Turn-off velocity
9.4 Pinching (focusing) time and turn-off gain
9.5 Maximum anode and gate currents
9.6 Plasma-pinching in the ungated n base
9.7 Theoretical model compared with experiment
10 Thyristor di/dt and Current Pulse Capability
10.1 Introduction
10.2 Test circuit for gate-triggered di/dt
10.3 Initial turn-on region
10.4 di/dt capability of the gated and nongated turn on
10.5 Localized temperature rise for a short single pulse
10.5 Temperature rise for long or recurrent pulses
10.7 Temperature rise and transient thermal impedance during turn-on spreading
10.8 Methods of increasing the initial turn-on area
10.9 Emitter gate
10.10 Emitter shorts versus the turn-on time
10.11 Beam-fired thyristor
10.12 Field-controlled thyristor
11 Bidirectional p-n-p-n Switches
11.1 Introduction
11.2 Bidirectional p-n-p-n diode switch
11.3 Current distribution across a forward-biased junction bounded by resistive layers (current-crowding effect)
11.4 Junction gate
11.5 Remote gate
11.6 Triac
12 Commutation of Triacs
12.1 Introduction
12.2 Current and voltage waveforms during commutation
12.3 Role of stored charges in triac commutation
12 A Recovery of a p+ -n abrupt-junction diode
12.5 Snubber networks for dv/dt suppression
13 Silicon Surface
13.1 Introduction
13.2 Ideal MOS diode
13.3 Silicon surf ace states and charges
14 Avalanche Breakdown Enhancement by Mesa Contouring
14.1 Introduction
14.2 Positive and negative bevel angles
14.3 Theoretical approach to the field computation in the depletion region
14.4 Negative bevel angle
14.5 Positively beveled junctions
14.6 Novel approaches to beveling
15 Planar-Junction Avalanche Breakdown Improvement
15.1 Introduction
15.2 Diffused guard ring
15.3 Junction field plate, annular ring, and channel stopper
15.4 Resistive field plate
15.5 p-n junction with field limiting rings
15.6 Etch-contoured planar junctions
16 Thyristor Thermal Response
16.1 Introduction
1 Device basics
1.1 Introduction
1.2 SCR current-voltage characteristics
1.3 Basic SCR construction features
1.4 Gate triggering
1.5 Holding current
1.6 Triggering a shorted emitter SCR
2 Current Gain
2.1 Variation of current gain with current
2.2 Current gain measurement
3 Thyristor Maximum Voltage Blocking Capability
3.1 Introduction
3.2 Maximum forward-blocking capability VBO
3.3 Maximum reverse-blocking capability
3.4 The punch-through condition
3.5 Temperature dependence
3.6 Surface breakdown
3.7 Reverse-conducting thyristor
4 Some High-Injection-Level Effects
4.1 Introduction
4.2 Ambipolar mobility and diffusivity
4.3 Mobility and diffusivity versus current density
4.4 Lifetime at high injection levels
4.5 High-low junctions at high current densities
4.6 Current gain fall-off
5 The Gate-Triggered SCR Turn-On Transient
5.1 Introduction
5.2 Charge-control model of a bipolar transistor
16.2 Heat generation and absorption in the forward-biased thyristor
16.3 Determination of junction temperature
16.4 Generalized concept of thermal impedance
16.5 Device temperature response to an arbitrary power waveshape
16.6 Thyristor thermal impedance measurement
16.7 Computer-aided thermal analysis
17 Thyristor Circuits Basics
17.1 Introduction
17.2 SCR and triac control and triggering methods
17.3 Thyristor triggering devices
17.4 Commutation
17.5 Effect of an impedance between the gate and cathode of a thyristor
17.6 Thyristor protection circuits
17.7 Some thyristor applications

Thyristor Physics

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