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131104 ||| eng |
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|a 9783319011653
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| 100 |
1 |
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|a Srivastava, Viranjay M.
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| 245 |
0 |
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|a MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
|h Elektronische Ressource
|c by Viranjay M. Srivastava, Ghanshyam Singh
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| 250 |
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|a 1st ed. 2014
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| 260 |
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|a Cham
|b Springer International Publishing
|c 2014, 2014
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| 300 |
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|a XV, 199 p. 55 illus., 45 illus. in color
|b online resource
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| 505 |
0 |
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|a Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope
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| 653 |
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|a Semiconductors
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| 653 |
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|a Electronic circuits
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| 653 |
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|a Telecommunication
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| 653 |
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|a Communications Engineering, Networks
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| 653 |
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|a Electronic Circuits and Systems
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| 700 |
1 |
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|a Singh, Ghanshyam
|e [author]
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| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b Springer
|a Springer eBooks 2005-
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| 490 |
0 |
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|a Analog Circuits and Signal Processing
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| 028 |
5 |
0 |
|a 10.1007/978-3-319-01165-3
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| 856 |
4 |
0 |
|u https://doi.org/10.1007/978-3-319-01165-3?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
0 |
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|a 621.3815
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| 520 |
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|a This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. · Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; · Explains the design of RF switches using the technologies presented and simulates switches; · Verifies parameters and discusses feasibility of devices and switches
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