Strain-Induced Effects in Advanced MOSFETs
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor fil...
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| Format: | eBook |
| Language: | English |
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Vienna
Springer Vienna
2011, 2011
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| Edition: | 1st ed. 2011 |
| Series: | Computational Microelectronics
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| Online Access: | |
| Collection: | Springer eBooks 2005- - Collection details see MPG.ReNa |
| Summary: | Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given |
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| Physical Description: | XIV, 252 p. 101 illus online resource |
| ISBN: | 9783709103821 |