Fowler-Nordheim Field Emission Effects in Semiconductor Nanostructures
This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3,...
| Main Authors: | , |
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| Format: | eBook |
| Language: | English |
| Published: |
Berlin, Heidelberg
Springer Berlin Heidelberg
2012, 2012
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| Edition: | 1st ed. 2012 |
| Series: | Springer Series in Solid-State Sciences
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| Subjects: | |
| Online Access: | |
| Collection: | Springer eBooks 2005- - Collection details see MPG.ReNa |
Table of Contents:
- PART–I: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM WIRES AND SUPERLATTICES OF NON-PARABOLIC MATERIALS
- Field emission from quantum wires of non-parabolic materials
- Field emission from quantum wire superlattices of non-parabolic materials
- Field emission from quantum confined materials under magnetic quantization
- Field emission from super lattices of non-parabolic materials under magnetic quantization
- PART–II: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM CONFINED OPTOELECTRONIC MATERIALS IN THE PRESENCE OF LIGHT WAVES
- Field emission from quantum confined materials in the presence of light waves
- PART – III: FOWLER-NORDHEIM FIELD EMISSION FROM QUANTUM CONFINED OPTOELECTRONIC MATERIALS IN THE PRESENCE OF INTENCE ELECTRIC FIELD
- Field emission from quantum confined optoelectronic materials
- Applications and Brief Review of Experimental Results