|
|
|
|
| LEADER |
01754nmm a2200313 u 4500 |
| 001 |
EB000386336 |
| 003 |
EBX01000000000000000239388 |
| 005 |
00000000000000.0 |
| 007 |
cr||||||||||||||||||||| |
| 008 |
130626 ||| eng |
| 020 |
|
|
|a 9783642195686
|
| 100 |
1 |
|
|a Ishibashi, Koichiro
|e [editor]
|
| 245 |
0 |
0 |
|a Low Power and Reliable SRAM Memory Cell and Array Design
|h Elektronische Ressource
|c edited by Koichiro Ishibashi, Kenichi Osada
|
| 250 |
|
|
|a 1st ed. 2011
|
| 260 |
|
|
|a Berlin, Heidelberg
|b Springer Berlin Heidelberg
|c 2011, 2011
|
| 300 |
|
|
|a XII, 144 p
|b online resource
|
| 505 |
0 |
|
|a Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies
|
| 653 |
|
|
|a Electronics and Microelectronics, Instrumentation
|
| 653 |
|
|
|a Engineering
|
| 653 |
|
|
|a Electronics
|
| 653 |
|
|
|a Technology and Engineering
|
| 700 |
1 |
|
|a Osada, Kenichi
|e [editor]
|
| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
|
| 989 |
|
|
|b Springer
|a Springer eBooks 2005-
|
| 490 |
0 |
|
|a Springer Series in Advanced Microelectronics
|
| 028 |
5 |
0 |
|a 10.1007/978-3-642-19568-6
|
| 856 |
4 |
0 |
|u https://doi.org/10.1007/978-3-642-19568-6?nosfx=y
|x Verlag
|3 Volltext
|
| 082 |
0 |
|
|a 621.381
|
| 520 |
|
|
|a Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design
|