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130626 ||| eng |
| 020 |
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|a 9781402034756
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| 100 |
1 |
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|a Nickel, Norbert H.
|e [editor]
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| 245 |
0 |
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|a Zinc Oxide - A Material for Micro- and Optoelectronic Applications
|h Elektronische Ressource
|b Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004
|c edited by Norbert H. Nickel, Evgenii Terukov
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| 250 |
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|a 1st ed. 2005
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| 260 |
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|a Dordrecht
|b Springer Netherlands
|c 2005, 2005
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| 300 |
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|a XVI, 240 p
|b online resource
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| 505 |
0 |
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|a ZnO Bulk and Layer Growth -- The Scope of Zinc Oxide Bulk Growth -- Growth Mechanism of ZnO Layers -- Kinetics of High-Temperature Defect Formation in ZnO in the Stream of Oxygen Radicals -- Electrical, Optical, and Structural Properties -- Electrical Properties of ZnO -- Electrical Properties of ZnO Thin Films and Single Crystals -- Structure, Morphology, and Photoluminescence of ZnO Films -- Optics and Spectroscopy of Point Defects in ZnO -- Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals -- Properties of Dislocations in Epitaxial ZnO Layers Analyzed by Transmission Electron Microscopy -- Role of Hydrogen -- Muon Spin Rotation Measurements on Zinc Oxide -- Hydrogen Donors in Zinc Oxide -- Hydrogen-Related Defects in ZnO Studied by IR Absorption Spectroscopy -- Influence of the Hydrogen Concentration on H Bonding in Zinc Oxide -- Fundamental Properties -- Valence Band Ordering and Magneto-Optical Properties of Free and Bound Excitons in ZnO -- Fundamental Optical Spectra and Electronic Structure of ZnO Crystals -- Photo-Induced Localized Lattice Vibrations in ZnO Doped with 3d Transition Metal Impurities -- Device Applications -- ZnO Window Layers for Solar Cells -- ZnO/AlGaN Ultraviolet Light Emitting Diodes -- ZnO Transparent Thin-Film Transistor Device Physics -- Zinc Oxide Thin-Film Transistors
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| 653 |
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|a Laser
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| 653 |
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|a Lasers
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| 700 |
1 |
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|a Terukov, Evgenii
|e [editor]
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| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b Springer
|a Springer eBooks 2005-
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| 490 |
0 |
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|a NATO Science Series II: Mathematics, Physics and Chemistry, Mathematics, Physics and Chemistry
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| 028 |
5 |
0 |
|a 10.1007/1-4020-3475-X
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| 856 |
4 |
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|u https://doi.org/10.1007/1-4020-3475-X?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
0 |
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|a 621.366
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| 520 |
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|a Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 – 40 meV and 60 – 70 meV.
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