1
by Maiti, C. K.
Published 2013
CRC Press
Table of Contents: ... -- 5. Strain-engineered MOSFETs -- 6. Noise in strain-engineered devices / C. Mukherjee -- 7...

2 Table of Contents: ...6.5 Drain and source resistances of LDD MOSFETs -- 6.6 Gate-oxide thickness dependence of LDD...

3
by Gimenez, Salvador Pinillos
Published 2016
Springer International Publishing
Table of Contents: ... for MOSFETS -- Diamond MOSFET (Hexagonal Gate Geometry) -- Octo Layout Style (Octagonal Gate Shape) for MOSFET...

4
by Baliga, B. Jayant
Published 2010
Springer US
Table of Contents: ...D-MOSFET Structure -- U-MOSFET Structure -- SC-MOSFET Structure -- CC-MOSFET Structure -- GD-MOSFET...

5
by Korec, Jacek
Published 2011
Springer New York
Table of Contents: ...MOSFET Basics -- Application Requirements -- Power MOSFET Performance -- MOSFET Generations -- Sync...

6
Published 1995
Springer US
Table of Contents: ...1 Static Measurements and Parameter Extraction -- 1.1 Introduction -- 1.2 Modeling of MOSFET DC...

7
by Gimenez, Salvador Pinillos, Galembeck, Egon Henrique Salerno
Published 2023
Springer International Publishing
Table of Contents: .... The electrical characteristics of the semiconductor at high temperatures -- Chapter 4. The MOSFET -- Chapter 5...

8
Published 2010
Springer US
Table of Contents: ...Non-Silicon MOSFET Technology: A Long Time Coming -- Properties and Trade-Offs of Compound...

9
by Bhattacharyya, A. B.
Published 2009
John Wiley & Sons (Asia)
Table of Contents: ...Semiconductor physics review for MOSFET modeling -- Ideal metal oxide semiconductor capacitor...

10
by Sverdlov, Viktor
Published 2011
Springer Vienna
...Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport...

11
by Arora, Narain D.
Published 1993
Springer Vienna
Table of Contents: ... Gate Current Model -- 8.3 Correlation of Gate and Substrate Current -- 8.4 Mechanism of MOSFET...

12
by Yuhua Cheng, Chenming Hu
Published 2002
Springer US
Table of Contents: ...Significant Physical Effects In Modern MOSFETs -- Threshold Voltage Model -- I–V Model...

13
by Hänsch, Wilfried
Published 1991
Springer Vienna
Table of Contents: ... Oxide Injection -- References -- 5 Degredation -- 5.1 Introduction -- 5.2 Analyzing a Degraded MOSFET...

14
Published 2013
CRC Press
Table of Contents: .... Device simulation using silvaco ATLAS tool / Angsuman Sarkar -- 6. Study of deep sub-micron VLSI MOSFETs...

15
by Ashraf, Nabil Shovon
Published 2018
Springer International Publishing
Table of Contents: ...Preface -- Acknowledgments -- Introduction -- Historical Perspectives of Scaled MOSFET Evolution...

16
Published 2005
Springer Berlin Heidelberg
Table of Contents: ... Based MOSFETS: Film Growth and Si—SiO2 Interface Properties -- Oxide Reliability Issues -- The Economic...

17
by Srivastava, Viranjay M., Singh, Ghanshyam
Published 2014
Springer International Publishing
Table of Contents: ...Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET...

18
by Franco, Jacopo, Kaczer, Ben, Groeseneken, Guido
Published 2014
Springer Netherlands
Table of Contents: ... Temperature Instability in (Si)Ge pMOSFETs -- 5 Negative Bias Temperature Instability in nanoscale devices...

19
by Ahmed, Noor
Published 2016
IntechOpen
Subjects: ...signal processing, computer simulation, statistical analysis, spectral analysis, mosfet, causality...