|
|
|
|
| LEADER |
04049nmm a2200385 u 4500 |
| 001 |
EB001951845 |
| 003 |
EBX01000000000000001114747 |
| 005 |
00000000000000.0 |
| 007 |
cr||||||||||||||||||||| |
| 008 |
210123 ||| eng |
| 020 |
|
|
|a 0857093290
|
| 020 |
|
|
|a 1845697367
|
| 020 |
|
|
|a 9780857093295
|
| 050 |
|
4 |
|a QC176.83
|
| 100 |
1 |
|
|a Cao, Zexian
|
| 245 |
0 |
0 |
|a Thin film growth
|b physics, materials science and applications
|c edited by Zexian Cao
|
| 260 |
|
|
|a Oxford
|b Woodhead Pub Ltd.
|c 2011
|
| 300 |
|
|
|a xvi, 416 pages
|b illustrations
|
| 505 |
0 |
|
|a Part 1 Theory of thin film growth: Measuring nucleation and growth processes in thin films -- Quantum electronic stability of atomically uniform films -- Phase-field modelling of thin film growth -- Analysing surface roughness evolution in thin films -- Modelling thin film deposition processes based on real-time observation. Part 2 Techniques of thin film growth: Silicon nanostructured films grown on templated surfaces by the oblique angle deposition technique -- Phase transitions in colloidal crystal thin films -- Thin film growth for thermally unstable noble-metal nitrides by reactive magnetron sputtering -- Growth of graphene layers for thin films -- Epitaxial growth of graphene thin films on single crystal metal surfaces -- Electronic properties and adsorption behaviour of thin films with polar character -- Polarity controlled epitaxy of III-nitrides and ZnO by molecular beam epitaxy -- Understanding substrate plasticity and buckling of thin films -- Controlled buckling of thin films on compliant substrates for stretchable electronics -- The electrocaloric effect (ECE) in ferroelectric polymer films -- Network behavior in thin films and nanostructure growth dynamics
|
| 505 |
0 |
|
|a Includes bibliographical references and index
|
| 653 |
|
|
|a Couches minces
|
| 653 |
|
|
|a Thin films / fast
|
| 653 |
|
|
|a TECHNOLOGY & ENGINEERING / Agriculture / General / bisacsh
|
| 653 |
|
|
|a Thin films / http://id.loc.gov/authorities/subjects/sh85134864
|
| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
|
| 989 |
|
|
|b OREILLY
|a O'Reilly
|
| 490 |
0 |
|
|a Woodhead publishing in materials
|
| 776 |
|
|
|z 1845697367
|
| 776 |
|
|
|z 0857093290
|
| 776 |
|
|
|z 9781845697365
|
| 776 |
|
|
|z 9780857093295
|
| 856 |
4 |
0 |
|u https://learning.oreilly.com/library/view/~/9781845697365/?ar
|x Verlag
|3 Volltext
|
| 082 |
0 |
|
|a 621.38152
|
| 082 |
0 |
|
|a 620
|
| 520 |
|
|
|a Thin film technology is used in many applications such as microelectronics, optics, hard and corrosion resistant coatings and micromechanics, and thin films form a uniquely versatile material base for the development of novel technologies within these industries. Thin film growth provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin films. Part one focuses on the theory of thin film growth, with chapters covering nucleation and growth processes in thin films, phase-field modelling of thin film growth and surface roughness evolution. Part two covers some of the techniques used for thin film growth, including oblique angle deposition, reactive magnetron sputtering and epitaxial growth of graphene films on single crystal metal surfaces. This section also includes chapters on the properties of thin films, covering topics such as substrate plasticity and buckling of thin films, polarity control, nanostructure growth dynamics and network behaviour in thin films. With its distinguished editor and international team of contributors, Thin film growth is an essential reference for engineers in electronics, energy materials and mechanical engineering, as well as those with an academic research interest in the topic. Provides an important and up-to-date review of the theory and deposition techniques used in the formation of thin filmsFocusses on the theory and modelling of thin film growth, techniques and mechanisms used for thin film growth and properties of thin filmsAn essential reference for engineers in electronics, energy materials and mechanical engineering
|