Epitaxial Growth of III-Nitride Compounds Computational Approach

This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretic...

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Corporate Author: SpringerLink (Online service)
Other Authors: Matsuoka, Takashi (Editor), Kangawa, Yoshihiro (Editor)
Format: eBook
Language:English
Published: Cham Springer International Publishing 2018, 2018
Edition:1st ed. 2018
Series:Springer Series in Materials Science
Subjects:
Online Access:
Collection: Springer eBooks 2005- - Collection details see MPG.ReNa
Summary:This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds
Physical Description:IX, 223 p. 136 illus., 101 illus. in color online resource
ISBN:9783319766416